Deniz, Ali RizaCaldiran, ZakirBiber, MehmetIncekara, UmitAydogan, Sakir2024-02-232024-02-2320180925-83881873-4669https://doi.org/10.1016/j.jallcom.2018.05.295https://hdl.handle.net/20.500.12452/12098In this study, Crystal Violet material was used for interface layer of Schottky diode applications. Firtly, chemical cleaning process have been made for boron doped n-Si crystals. After, Al metal was coated on the one surface of crystals by thermal evaporation and crystal violet materials were coated on other surface of crystals with spin coating method (coating parameters; 800 rpm for 60 s). Lastly, Ni metal was coated on Crystal Violet by sputtering. So, we obtained the Ni/Crystal Violet/n-Si/Al Schottky type diode. After the fabrication process of diode, the current-voltage (I-V) and capacity-voltage (C-V) measurements of Ni/Crystal Violet/n-Si/Al Schottky type diode were taken for various temperatures. The some basic diode parameters such as ideality factor (n), barrier height (Phi(b)) and series resistance (Rs) of Ni/Crystal Violet/n-Si/Al were calculated from I-V measurements using different methods (Thermionic Emission, Cheung and Norde functions). Also, diode parameters such as Fermi energy level, diffusion potential, carrier concentration and barrier height were calculated from the C-V measurements of diode as a function of temperature. (C) 2018 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessCrystal VioletSchottky DiodeThermionic EmissionNordeCurrent-VoltageCapacity-VoltageArticle7636226282-s2.0-85048192059Q1WOS:000442484300071Q110.1016/j.jallcom.2018.05.295