Erdal, Mehmet OkanKocyigit, AdemYildirim, Murat2024-02-232024-02-2320191369-80011873-4081https://doi.org/10.1016/j.mssp.2019.104620https://hdl.handle.net/20.500.12452/12375We fabricated undoped and Cu doped TiO2 thin films by spin coating technique and employed the films as interfacial oxide layer between the Al and n-type Si to investigate the effect of temperature on the Al/TiO2/n-Si and Al/Cu:TiO2/n-Si devices. For that aim, the I-V measurements were performed in the range of 50 K-400 K by 50 K interval. The devices exhibited good rectifying behavior and thermal response in a wide range temperature. Ideality factor, barrier height and series resistance were calculated from I-V measurements for various temperatures by thermionic emission theory, Norde and Cheung methods and discussed in the details. The obtained results revealed that the device parameters are a strong function of the temperature. The interface states (N-ss) were affected by the changing of the temperatures. The Al/TiO2/n-Si and Al/Cu:TiO2/n-Si devices can be performed for wide range temperatures in various technological applications.eninfo:eu-repo/semantics/closedAccessCu Doped Tio2 Thin FilmsAl/Tio2/N-SiTemperature-Dependent I-V CharacteristicsSpin CoatingArticle1032-s2.0-85068973549Q1WOS:000483376900010Q210.1016/j.mssp.2019.104620