Kabatas, Mohamed A. Basyooni-M.En-nadir, RedouaneRahmani, KhalidEker, Yasin Ramazan2024-02-232024-02-2320232072-666Xhttps://doi.org/10.3390/mi14101860https://hdl.handle.net/20.500.12452/15945In this study, we delved into the influence of Ir nanofilm coating thickness on the optical and optoelectronic behavior of ultrathin MoO3 wafer-scale devices. Notably, the 4 nm Ir coating showed a negative Hall voltage and high carrier concentration of 1.524 x 10(19) cm(-3) with 0.19 nm roughness. Using the Kubelka-Munk model, we found that the bandgap decreased with increasing Ir thickness, consistent with Urbach tail energy suggesting a lower level of disorder. Regarding transient photocurrent behavior, all samples exhibited high stability under both dark and UV conditions. We also observed a positive photoconductivity at bias voltages of >0.5 V, while at 0 V bias voltage, the samples displayed a negative photoconductivity behavior. This unique aspect allowed us to explore self-powered negative photodetectors, showcasing fast response and recovery times of 0.36/0.42 s at 0 V. The intriguing negative photoresponse that we observed is linked to hole self-trapping/charge exciton and Joule heating effects.eninfo:eu-repo/semantics/openAccessMolybdenum OxideAtomic Layer DepositionSputtering DepositionUrbach Tail EnergyLow Roughness Optoelectronic DevicesArticle1410378932982-s2.0-85175366184WOS:00109939860000110.3390/mi14101860