Demir, K. CinarKurudirek, S. V.Oz, S.Biber, M.Aydogan, S.Sahin, Y.Coskun, C.2024-02-232024-02-2320180218-625X1793-6667https://doi.org/10.1142/S0218625X18500646https://hdl.handle.net/20.500.12452/14172We fabricated 25 Au/n-GaP/Al Schottky devices and investigated the influence of high electron irradiation, which has 12MeV on the devices, at room temperature. The X-ray diffraction patterns, scanning electron microscopic images and Raman spectra of a gallium phosphide (GaP) semiconductor before and after electron irradiation have been analyzed. Furthermore, some electrical measurements of the devices were carried out through the current-voltage (I-V) and capacitance-voltage (C-V) measurements. From the I-V characteristics, experimental ideality factor n and barrier height Phi values of these Schottky diodes have been determined before and after irradiation, respectively. The results have also been analyzed statically, and a gauss distribution has been obtained. The built-in potential V-bi, barrier height Phi, Fermi level E-F and donor concentration N-d values have been determined from the reverse bias C-V and C-2-V curves of Au/n-GaP/Al Schottky barrier diodes at 100 kHz before and after 12MeV electron irradiation. Furthermore, we obtained the series resistance values of Au/n-GaP/Al Schottky barrier diodes with the help of different methods. Experimental results confirmed that the electrical characterization of the device changed with the electron irradiation.eninfo:eu-repo/semantics/closedAccessIii-V SemiconductorsGapSchottky DiodeIrradiation EffectSurface PhysicsArticle2532-s2.0-85023184628Q3WOS:000427076800003Q410.1142/S0218625X18500646