Basyooni, Mohamed A.Tihtih, MohammedZaki, Shrouk E.Eker, Yasin Ramazan2024-02-232024-02-2320232637-6113https://doi.org/10.1021/acsaelm.3c01047https://hdl.handle.net/20.500.12452/12728Nanostructures of ultrathin 2D MoO3 semiconductors have gained significant attention in the field of transparent optoelectronics and nanophotonics due to their exceptional responsiveness. In this study, we investigate self-powered alpha-MoO3/Ir/alpha-MoO3 photodetectors, focusing on the influence of induced hot electrons in ultrathin alpha-MoO3 when combined with an ultrathin Ir plasmonic layer. Our results reveal the presence of both positive and negative photoconductivity at a 0 V bias voltage. Notably, by integrating a 2 nm Ir layer between post-annealed alpha-MoO3 films, we achieve remarkable performance metrics, including a high I-ON/I-OFF ratio of 3.8 x 10(6), external quantum efficiency of 132, and detectivity of 3.4 x 10(11) Jones at 0 V bias. Furthermore, the response time is impressively short, with only 0.2 ms, supported by an exceptionally low MoO3 surface roughness of 0.1 nm. The observed negative photoresponse is attributed to O-2 desorption from the MoO3 surface, resulting in increased carrier density and reduced mobility in the Ir layer due to Coulomb trapping and oxygen vacancy deep levels. Consequently, this leads to a decreased carrier mobility and diminished current in the heterostructure. Our findings underscore the enormous potential of ultrathin MoO3 semiconductors for high-performance negative conductivity optoelectronics and photonic applications.eninfo:eu-repo/semantics/closedAccessMoo3IridiumPlasmonics PhotodetectorsNegative Photoconductivity (Npc)Atomic Layer Deposition(Ald)Article510569657132-s2.0-85176139079WOS:00107896510000110.1021/acsaelm.3c01047