Yildiz, Dilber EsraKocyigit, AdemErdal, Mehmet OkanYildirim, Murat2024-02-232024-02-2320210250-47070973-7669https://doi.org/10.1007/s12034-020-02297-yhttps://hdl.handle.net/20.500.12452/11326The dielectric properties of the Al/PCBM:ZnO/p-Si structure were investigated using the impedance spectroscopy technique. PCBM:ZnO layer was obtained by spin coating method on the p-Si. The morphological properties of the PCBM:ZnO were investigated using atomic force microscopy. The results highlighted that PCBM:ZnO thin film has uniform surfaces. The dielectric parameters such as real and imaginary parts of the electric modulus (M ' and M '') and ac electrical conductivity (sigma), dielectric constant (epsilon '), dielectric loss (epsilon ''), loss tangent (tan delta) values were determined. The results of the dielectric properties of the Al/PCBM:ZnO/p-Si structures impressed voltage and frequency changing. The Al/PCBM:ZnO/p-Si structures can be regarded as a candidate for organic diode applications.eninfo:eu-repo/semantics/closedAccessPcbmZnoDielectric ConstantElectric ModulusAl/Pcbm:Zno/P-Si StructureArticle4412-s2.0-85100549063Q3WOS:000617476200011Q410.1007/s12034-020-02297-y