Yazar "Aydogan, S." seçeneğine göre listele
Listeleniyor 1 - 4 / 4
Sayfa Başına Sonuç
Sıralama seçenekleri
Öğe Effects of PEDOT:PSS and crystal violet interface layers on current-voltage performance of Schottky barrier diodes as a function of temperature and variation of diode capacitance with frequency(Elsevier, 2022) Deniz, A. R.; Tas, A. I.; Caldiran, Z.; Incekara, U.; Biber, M.; Aydogan, S.; Turut, A.In this study, diode applications of Crystal Violet (CV) and PEDOT materials were studied. The Ni/p-Si/Al, Ni/CV/p-Si/Al and Ni/PEDOT:PSS/CV/p-Si/Al diodes were fabricated. The I-V (current-voltage) characteristics of all diodes were analyzed at room temperature, it was determined that the PEDOT:PSS and CV materials improved the basic diode parameters. Also, I-V characteristics of Ni/PEDOT:PSS/CV/p-Si/Al of diode were investigated for different temperature values. It has been determined that the basic diode parameters are strongly dependent on temperature. It was determined that while the barrier height (Fb) increased with increasing temperature, the ideality factor (n) and the series resistance (Rs) values decreased. Using temperature-dependent measurements, it was determined that the potential barrier and ideality factor values at the contact interface has a double Gaussian distribution. In addition, C-V (capacitance-voltage) measurements of these diodes were analyzed depending on the frequency. It was found that the diode capacitance decreased with increasing frequency.Öğe THE INFLUENCE OF HIGH-ENERGY ELECTRONS IRRADIATION ON SURFACE OF n-GaP AND ON Au/n-GaP/Al SCHOTTKY BARRIER DIODE(World Scientific Publ Co Pte Ltd, 2018) Demir, K. Cinar; Kurudirek, S. V.; Oz, S.; Biber, M.; Aydogan, S.; Sahin, Y.; Coskun, C.We fabricated 25 Au/n-GaP/Al Schottky devices and investigated the influence of high electron irradiation, which has 12MeV on the devices, at room temperature. The X-ray diffraction patterns, scanning electron microscopic images and Raman spectra of a gallium phosphide (GaP) semiconductor before and after electron irradiation have been analyzed. Furthermore, some electrical measurements of the devices were carried out through the current-voltage (I-V) and capacitance-voltage (C-V) measurements. From the I-V characteristics, experimental ideality factor n and barrier height Phi values of these Schottky diodes have been determined before and after irradiation, respectively. The results have also been analyzed statically, and a gauss distribution has been obtained. The built-in potential V-bi, barrier height Phi, Fermi level E-F and donor concentration N-d values have been determined from the reverse bias C-V and C-2-V curves of Au/n-GaP/Al Schottky barrier diodes at 100 kHz before and after 12MeV electron irradiation. Furthermore, we obtained the series resistance values of Au/n-GaP/Al Schottky barrier diodes with the help of different methods. Experimental results confirmed that the electrical characterization of the device changed with the electron irradiation.Öğe Photo-sensor characteristics of tannic acid (C76H52O46)/n-Si hybrid bio-photodiode for visible and UV lights detection(Elsevier Sci Ltd, 2022) Yildirim, Fatma; Orhan, Zeynep; Taskin, Mesut; Incekara, Umit; Biber, Mehmet; Aydogan, S.We present the electo-optical characterization of tannic acid (TA)/n-Si heterojunction for visible and UV lights (365 nm and 395 nm). The TA was deposited on n-Si by spin coating. The morphological and structural analyses of TA film were carried out by Scanning Electron Microscopy (SEM) and Energy-dispersive X-ray (EDX) analyses, respectively. The electro-optical performance of the TA/n-Si bio-photodiode were investigated by I-V measurements for 10 mW/cm(2), 15 mW/cm(2), 20 mW/cm(2) and 30 mW/cm(2) visible light intensities in addition to UV light. Light-dependent the responsivity, ON/OFF ratio, detectivity, shunt resistance and series resistance were calculated. Maximum values of responsivity, detectivity and ON/OFF ratio were determined as 11.9 mA/W (-1.5 V), 3.2 x 109 Jones (at-0.42 V) and 194 (30 mW/cm2) (AM 1.5 G), at-2 V respectively. Whereas, they were determined to be 0.1 A/W, 4 x 109 Jones and 14977, respectively for UV light. Furthermore, the dielectric properties of the TA/n-Si heterostructure also were investigated from the dark Capacitance/Conductance-Voltage measurements. It was seen that both real and imaginary parts of the dielectric constants was frequency dependent. Experimental results show that the TA/n-Si device with a high rectification ratio of 2263 is a potential candidate for detecting visible and UV lights.Öğe The power conversion efficiency optimization of the solar cells by doping of (Au:Ag) nanoparticles into P3HT:PCBM active layer prepared with chlorobenzene and chloroform solvents(Iop Publishing Ltd, 2019) Kacus, H.; Aydogan, S.; Biber, M.; Metin, O.; Sevim, M.We report to enhance the power conversion efficiency of organic solar cells by embedding of (Au:Ag) nanoparticles (NPs) into P3HT:PCBM active layer of the organic solar cells. Furthermore, the effect of solvents based on chlorobenzene and chloroform on the P3HT:PCBM active layer has been investigated for comparison. As known, the performance of organic solar cells based on the blend of regioregular P3HT:PCBM is strongly influenced by blend composition. For this purpose, ITO/PEDOT:PSS/P3HT:PCBM/(Au: Ag) NPs/LiF/Al quaternary hybrid solar cells were fabricated. Absorption, AFM, SEM and XRD measurements of the quaternary hydride active layers prepared with chlorobenzene (CB) and chloroform(CF) solvents were obtained. The optical energy band gap of the hybrid active layer was calculated. The highest PCE values were obtained for 1.2% Au:0.3% AgNPs ratios and the study has been focused on these values. (Au:Ag) NPs in the active layer increased the power conversion efficiency (PCE) of the device from 2.11% to 3.29% and to 2.27% for prepared with CB and CF solvents, respectively. This increase was explained by the scatter of the incident light from the NPs and an enhancement of light absorption in the active layer of the solar cell, increasing the optical path distance.
