Yazar "Boukhoubza, Issam" seçeneğine göre listele

Listeleniyor 1 - 5 / 5
  • Küçük Resim Yok
    Öğe
    Boosting the efficiency of Cu2ZnSnS4 solar cells with VO2 phase transition photonic crystal
    (Elsevier, 2023) Basyooni, Mohamed A.; Houimi, Amina; Tihtih, Mohammed; Zaki, Shrouk E.; Boukhoubza, Issam; Belaid, Walid; En-nadir, Redouane
    Photonic crystal (PhC) has been studied for their potential to improve the efficiency of Cu2ZnSnS4 solar cells by increasing the generated photocurrent by integrating it as a back reflector with almost zero transmission through the absorption active zone of the solar cell. It was found that the thickness of PhC layers greatly affects the width of the photonic bandgap and that increasing the thickness of VO2 causes it to shift to a higher wavelength range. The PhC layers were added at the back side of the solar cell in two different configurations: (Monoclinic (M) VO2/TiO2) and (Tetragonal (T) VO2/TiO2) via SCAPS model. The study found that the (M VO2/TiO2) configuration led to an enhancement of the device's efficiency from 11.02 to 12.79%, while the (T VO2/TiO2) reaches 16.88%. The study concluded that the PhC layers enhance the light-matter coupling and photonic coupling and improvement in the device's performance.
  • Küçük Resim Yok
    Öğe
    Impact of thickness on optoelectronic properties of ?-MoO3 film photodetectors: Integrating first-principles calculations with experimental analysis
    (Elsevier, 2023) Basyooni, Mohamed A.; Achehboune, Mohamed; Boukhoubza, Issam; Gaballah, A. E. H.; Tihtih, Mohammed; Belaid, Walid; En-nadir, Redouane
    This study focused on investigating the optoelectronic properties of molybdenum trioxide (alpha-MoO3) thin films using the atomic layer deposition (ALD) technique through different cycle numbers and theoretical investigation. Initial band gap calculations using standard DFT with GGA-PBE resulted in a value of 1.19 eV, which deviated significantly from experimental measurements. The GGA + U method with Hubbard U corrections was applied for the first time to improve the accuracy. This refinement led to a more precise band gap value of 3.09 eV, closely matching previously reported experimental data. The electronic parameters of the alpha-MoO3 photodetector, such as ideality factor (n), barrier height (phi 0), and series resistance (Rs), were analyzed using the thermionic emission theory and confirmed by Cheung and Nord's methods. The results demonstrated that the sample deposited with 100 pulses exhibited higher photodetector performance under UV illumination, despite having a lower Rs.
  • Küçük Resim Yok
    Öğe
    Iridium/Silicon Ultrathin Film for Ultraviolet Photodetection: Harnessing Hot Plasmonic Effects
    (Wiley-V C H Verlag Gmbh, 2024) Basyooni, Mohamed A.; Tihtih, Mohammed; Boukhoubza, Issam; Ibrahim, Jamal Eldin F. M.; En-nadir, Redouane; Abdelbar, Ahmed M.; Rahmani, Khalid
    The phenomenon of hot carriers, which are generated through the nonradiative decay of surface plasmons in ultrathin metallic films, offers an intriguing opportunity for subbandgap photodetection even at room temperature. These hot carriers possess sufficient energy to inject into the conduction band of a semiconductor material. The groundbreaking use of iridium (Ir) ultrathin film as an ultraviolet (UV) plasmonic material on silicon (Si) for high-performance photodetectors (PHDs) has been successfully demonstrated. Elevating the thickness of the sputtered Ir film to 4 nm yields a notable surge in photocurrent, registering an impressive 600 & mu;A under 365 nm UV illumination with electron mobility of 1.37E3 cm2 V-1 s. This PHD exhibits excellent OFF-ON photoresponses at various applied voltages ranging from 0 to 5 V, maintaining a stable photocurrent. Under UV illumination, it displays exceptional performance, achieving a high detectivity of 1.25E14 Jones and a responsivity of 1.28 A W-1. These outstanding results underscore the significant advantages of increasing the thickness of the Ir film in PHDs, leading to improvements in conductivity, detectivity, external quantum efficiency, responsivity, as well as superior sensitivity for light detection. Exploring hot plasmon effects in iridium/silicon ultrathin films: This study delves into a remarkable ultrasmooth iridium thin film's application in hot electron plasmonic photodetectors. Exciting strides in optoelectronic devices are anticipated, owing to their capability for efficient light modulation, absorption, and conversion, with implications for photodetection and solar energy transformation.image & COPY; 2023 WILEY-VCH GmbH
  • Küçük Resim Yok
    Öğe
    Reduced graphene oxide-functionalized zinc oxide nanorods as promising nanocomposites for white light emitting diodes and reliable UV photodetection devices
    (Elsevier Science Sa, 2023) Boukhoubza, Issam; Derkaoui, Issam; Basyooni, Mohamed A.; Achehboune, Mohamed; Khenfouch, Mohammed; Belaid, Walid; Enculescu, Monica
    We present a breakthrough in the development of novel nanocomposites based on reduced graphene oxide (RGO)-functionalized zinc oxide (ZnO) nanorods that hold exceptional promise for their use in white light emitting diodes (LEDs) and reliable UV photodetection. The nanorods had a pristine hexagonal wurtzite struc-ture, as confirmed by XRD analysis. SEM images revealed sandwich-like nanocomposites with ZnO nanorods coated in reduced graphene oxide and embedded between two layers of RGO. The study also confirmed the hybridization and interactions between the layers using Raman measurements. The resulting nanocomposites displayed a lower band gap energy than ZnO and exhibited unique photoluminescence spectra with a white PL light. The photodetector based on RGO/ZnO/RGO sandwich structures demonstrated exceptional photoresponse, with higher photocurrent under UV illumination, making it highly promising for a wide range of optoelectronic applications. Overall, this study offers a novel and powerful approach to create nanocomposite structures with enhanced optical characteristics.
  • Küçük Resim Yok
    Öğe
    Self-Powered UV Photodetector Utilizing Plasmonic Hot Carriers in 2D ?-MoO3/Ir/Si Schottky Heterojunction Devices
    (Wiley-V C H Verlag Gmbh, 2024) Basyooni, Mohamed A.; Zaki, Shrouk E.; Tihtih, Mohammed; Boukhoubza, Issam; En-nadir, Redouane; Derkaoui, Issam; Attia, Gamal F.
    Self-powered UV sensing has enormous potential in military and civilian applications. However, achieving high responsivity and fast response/recovery time presents significant challenges. Self-powered photodetectors (PDs) have several advantages over traditional PDs, including higher sensitivity, lower power consumption, and simpler design. This study introduces a breakthrough self-powered PD that uses a Schottky junction of 2D alpha-MoO3/iridium (Ir)/Si ultrathin film to detect 365 nm light at 0 V bias through using atomic layer deposition (ALD) and sputtering systems. The PD response is enhanced by plasmonic Ir-induced hot carriers, enabling detection in a mere 0.1 ms. Incorporating a 4 nm Ir layer boosts the responsivity from 0 to 34 A W-1, and the external quantum efficiency is elevated from 0 to 7E11 under 365 nm light illumination. It also has a high I-ON/I-OFF ratio of 11.22E4 at 0 V. These results make the MoO3/4 nm Ir/Si structure an interesting option for self-powered PDs with high efficiency, and the use of a simple ALD system for large-scale fabrication of 2D alpha-MoO3 on hot carrier Ir plasmonic layer. The findings of this research hold tremendous promise in the field of UV sensing and can lead to exciting developments in military and civilian technology.