Yazar "Erdal, M. O." seçeneğine göre listele

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    The effect of indium doping concentration on the electrical and dielectric properties of Al/In:ZnO/p-Si heterojunctions
    (Elsevier, 2019) Yildirim, M.; Erdal, M. O.; Kocyigit, A.
    Undoped and 0.1% 0.5% and 1.0% indium doped ZnO thin films were obtained by spin coating method as interfacial thin film layer between Al metal and p-Si semiconductor to investigate dielectric properties of the Al/In: ZnO/p-Si heterojunctions. Impedance spectroscopy technique was employed to characterize the dielectric properties of the Al/In: ZnO/p-Si heterojunctions depending on frequency (from 10 kHz to 1 MHz) and voltage (from - 5 V to + 5 V). The results imparted that interface states (N-ss), series resistance (R-s), barrier height (Phi(b)) and the concentration of acceptor atoms (N-a) influenced frequency changes. The dielectric parameters such as dielectric constant (epsilon'), dielectric loss (epsilon ''), loss tangent (tan delta), real and imaginary parts of the electric modulus (M' and M '') and ac electrical conductivity (sigma) values were calculated from impedance spectroscopy measurements and discussed in details for changing frequency and voltage for various In doped ZnO thin film interlayers. The dielectric properties of the Al/In:ZnO/p-Si heterojunctions were affected both In doping concentration and the frequency and voltage changes. The Al/In:ZnO/p-Si heterojunctions can be considered for industrial applications to increase the control.
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    The frequency dependent electrical properties of MIS structures with Mn-doped complexed interfacial layer
    (Iop Publishing Ltd, 2023) Baris, B.; Yildiz, D. E.; Karadeniz, S.; Kose, D. A.; Erdal, M. O.; Yildirim, M.
    In this study, Mn doped complexes were produced and used as an interfacial layer in Au/Mn-complex/n-Si structure. For this aim, a mixed ligand complex was prepared and doped with manganese. The morphological investigations of these structures were fulfilled by using an Atomic Force Microscope. The analyzes showed that relatively smooth and well ordered surfaces. The fabricated devices were characterized using capacitance-voltage (C-V) and conductance-voltage (G/w-V). The electrical parameters such as dielectric ( e', e and tand), electrical modulus (M' and M), serial resistance (R-s), interface states (D-it) and ac conductivity (s (ac)) of fabricated Au/Mn-complex/n-Si structure were determined at various frequencies (1 kHz-1000 kHz) and voltages (-2 to 4V with steps 0.02 V), at room temperature and dark environment. Measurements have shown that capacitance and conductivity are highly frequency dependent. At low frequencies, the surface states have increased, but as the frequency increased, the values became too low to pin the Fermi level.
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    The rate of Cu doped TiO2 interlayer effects on the electrical characteristics of Al/Cu:TiO2/n-Si (MOS) capacitors depend on frequency and voltage
    (Pergamon-Elsevier Science Ltd, 2020) Erdal, M. O.; Kocyigit, A.; Yildirim, M.
    In order to determine the surface states (N-ss), series resistance (R-s), and (Cu:TiO2) interlayer effects on the electrical characteristics of the Al/Cu:TiO2/n-Si metal oxide semiconductor (MOS) capacitors, both capacitance (C) and conductance (G) values were measured for frequency ranges of 10 kHz-1 MHz and +/- 5 V voltage ranges. In addition, to know Cu doping concentration effect on the MOS capacitor, the Al/Cu:TiO2/n-Si was fabricated with various rates Cu:TiO2 interlayer (5, 10, 15%) grown on n-Si susbtrate by spin-coating. The increase in capacitance via decreasing frequencies was attributed to the existence of N-ss and their relaxation time. The frequency dependent diffusion potential (V-d), doping of donor atoms (N-d), Fermi energy (E-F), barrier height (Phi b) and depletion layer width (W-d) values were extracted from the linear part of reverse bias C-2-V curves. While the value the R-s decreased with increasing frequency, the N-ss values increased for the three MOS capacitors. The profiles of N-ss and R-s depending on voltage were also plotted by Nicollian-Brews methods and using high-low frequency (C-HF-C-LF) capacitance, respectively. The mean values of N-ss for three capacitors were found at about 10(12) eV(-1)cm(-2) as suitable electronic devices. The lower values of the N-ss can be attributed to passivation effect of Cu:TiO2 interlayer.