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Öğe Effect of an ITIC non-fullerene interlayer on electrical properties and external quantum efficiency of Al/ZnO/p-Si Schottky photodiodes(Springer, 2023) Oeztuerk, Teoman; Hussaini, Ali Akbar; Erdal, Mehmet Okan; Durmaz, Fatih; Yildirim, MuratMetal-semiconductor (MS) heterojunctions are one of the main components of today's technology. In the production of metal-semiconductor heterojunctions; metal oxides, insulators or polymers are inserted as interlayers between metal and semiconductor to ameliorate the durability, stability and efficiency of heterojunctions. By improving their durability, stability and efficiency through the use of ITIC as an interlayer material, the performance of these devices can be enhanced. By adding ITIC to the ZnO interlayer, ITIC: ZnO layer heterojunctions applications were carried out in this study. ITIC, a nonfullerene material, is employed as an electron acceptor material in organic solar cells. The ITIC:ZnO composite layer in our study was grown on Si substrates using spin coating method. Subsequently, Al/ZnO/p-Si and Al/ITIC:ZnO/p-Si heterojunctions were produced by physical vapor deposition method and the electrical properties of the produced devices were characterized. In these characterizations, current-voltage measurements were performed in the dark and under various light power illumination intensities ranging from 20 to 100 mW/cm(2). From the current-voltage characteristics, various electrical parameters were calculated. While the ideality factor values for Al/ZnO/p-Si were found to be 7.55 and 7.73, it was found as 6.83 and 6.65 for ITIC-doped photodiode using thermionic emission and Cheung models, respectively. The barrier height values for Al/ZnO/p-Si were 0.62 eV, 0.64 eV and 0.64 eV, while the same values were found as 0.60 eV, 0.63 eV and 0.61 eV for Al/ITIC:ZnO/p-Si using the thermionic emission, Cheung and Norde models, respectively. From current transient measurements, photosensitivity, specific detectivity and responsivity were calculated as optoelectronic parameters. Moreover, the heterojunctions demonstrated high external quantum efficiency with the addition of ITIC. According to the results, ITIC component is functional for photodiode and photodetector applications.Öğe Identification and classification of Eremogone species using DNA based Schottky diodes(Elsevier, 2023) Atasagun, Bayram; Armag, Metin; Tugay, Osman; Ulukus, Deniz; Hussaini, Ali Akbar; Yildirim, MuratThe revelation of DNA's remarkable conducting characteristics provided a significant boost for the development of DNA-based electronics. These distinguishing characteristics can be used to identify or detect DNA. In this study, it was basically aimed to investigate the possibility of using Schottky barrier diodes in which semiconductor DNA is used as the interface from three endemic Eremogone species distributed in Turkey. We collected Eremogone ali-gulii, Eremogone armeniaca, and Eremogone scariosa endemic species and extracted the DNA via the QIAGEN commercial DNA isolation kit procedure. The DNA samples were deposited by drop casting on the thin film indium tin oxide substrate. Electrical characterization of DNA interlayered heterojunctions was investigated via a solar simulator. Electronic parameters such as ideality factor, barrier height, and series resistance were calculated from I to V characteristics. Electrical properties of DNA samples were investigated and compared to Colchicum triphyllum's DNA which is completely from another genus. The results show that morphologically similar species have similar electrical properties. When compared to Colchicum triphyllum-DNA based device, genus Eremogone-DNA based devices have a lower ideality factor, barrier height, and series resistance. Via this technique, DNA samples can be identified, detected, and classified.Öğe Investigation of electrical properties of Al/LiCoO2/n-Si photodiode by ultrasonic spray pyrolysis method(Springer Heidelberg, 2023) Hussaini, Ali Akbar; Erdal, Mehmet Okan; Doğan, Kemal; Koyuncu, Mustafa; Yıldırım, Murathere has been rising concentration on the photodiode properties of the MS devices in recent years to improve the perfor mance of light sensing devices. Therefore, in this study, LiCoO2 was synthesized via sol–gel-based electrospinning method and it is used as interlayer between Al and n-type Si to fabricate Al/LiCoO2/n-Si photodiode via ultrasonic spray pyrolysis and physical vapor deposition methods. LiCoO2 thin flm was characterized via XRD, SEM and AFM. Crystallite size for LiCoO2 was found to be 37.75 nm. Electrical characterization was performed by current–voltage (I−V) and current-transient (I−t) measurements using solar simulator under dark and various illumination conditions. I−V characteristics demonstrated that the Al/LiCoO2/n-Si exhibited good photodiode behavior and a high rectifying ratio. Moreover, LiCoO2-interlayered device has shown signifcant responsivity and detectivity. It has shown 1.79× 1010 Jones detectivity and 0.364 A/W responsivity at 100 mW light power. Thus, the results demonstrate that a device based on LiCoO2 can be employed in optoelectronic applications.Öğe Investigation of photosensitive properties of novel TiO2:Cu2O mixed complex interlayered heterojunction: showcasing experimental and DFT calculations(Springer, 2024) Aksan, Sinem; Hussaini, Ali Akbar; Erdal, Mehmet Okan; Tastan, Oguzhan; Guzel, Rabia; Sacmaci, Serife; Yildirim, MuratIn this study, we investigated the effect of different reducing agents (ascorbic acid and sodium boron hydride) on optoelectronic properties of TiO2:Cu2O nanocomposites. The TiO2:Cu2O nanocomposites were characterized using X-ray diffractometry (XRD), Fourier transform infrared spectroscopy (FTIR), Field Emission Scanning Electron Microscopy (FESEM), and Energy dispersive X-ray (EDX). The electronic properties of the structure were calculated with the density functional theory (DFT). Both devices showed good responsivity and detectivity against light intensities. The photosensitivity of the devices had linear increasing profile with increasing light power. It is noteworthy that both devices demonstrated well-rectifying behaviors as a result of having low reverse bias and greater forward bias currents at the I-V characteristics in low light. The reduction of the band gap shifted the absorption band gap from the visible light region to the red edge. Density Functional Theory (DFT) calculations which has been done by using CASTEP are in good agreement with our experimental results. Ti(1 - x)CuxO2 (7.5:1) band gap is 1.18 eV which is compared to the Shockley ve Quiser (SQ) limit. Ti(1 - x)CuxO2 (15:1) band gap is 1.83 eV while the band gap is 2.28 eV for stoichiometric TiO2 with our DFT calculations. Thus, the band gap narrowed with increasing Cu amount. This provides an improvement in light absorption. In conclusion, the results demonstrate that Al/TiO2:Cu2O/p-Si can be used in optoelectronic applications.
