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Öğe Investigation of electrical properties of Ni/Crystal Violet (C25H30CIN3)/n-Si/Al diode as a function of temperature(Elsevier Science Sa, 2018) Deniz, Ali Riza; Caldiran, Zakir; Biber, Mehmet; Incekara, Umit; Aydogan, SakirIn this study, Crystal Violet material was used for interface layer of Schottky diode applications. Firtly, chemical cleaning process have been made for boron doped n-Si crystals. After, Al metal was coated on the one surface of crystals by thermal evaporation and crystal violet materials were coated on other surface of crystals with spin coating method (coating parameters; 800 rpm for 60 s). Lastly, Ni metal was coated on Crystal Violet by sputtering. So, we obtained the Ni/Crystal Violet/n-Si/Al Schottky type diode. After the fabrication process of diode, the current-voltage (I-V) and capacity-voltage (C-V) measurements of Ni/Crystal Violet/n-Si/Al Schottky type diode were taken for various temperatures. The some basic diode parameters such as ideality factor (n), barrier height (Phi(b)) and series resistance (Rs) of Ni/Crystal Violet/n-Si/Al were calculated from I-V measurements using different methods (Thermionic Emission, Cheung and Norde functions). Also, diode parameters such as Fermi energy level, diffusion potential, carrier concentration and barrier height were calculated from the C-V measurements of diode as a function of temperature. (C) 2018 Elsevier B.V. All rights reserved.Öğe On thermal and optical sensor applications of chitosan molecule in the Co/Chitosan/p-Si hybrid heterojunction design(Springer, 2021) Kacus, Hatice; Aydogan, Sakir; Incekara, Umit; Yilmaz, Mehmet; Biber, MehmetCo/Chitosan/p-Si/Al and Co/p-Si devices were made and barrier height and ideality factor values of both devices were determined at room temperature (dark conditions). After the chitosan interlayer was found to improve the device, the thermal and photosensivity properties of the Co/Chitosan/p-Si/Al device were investigated in detail. The current-voltage measurements of Co/Chitosan/p-Si/Al heterojunction were performed in temperature range of 100-460 K and illumination intensity range of 100-400 mW/cm(2). It was seen that the device parameters such as barrier height, ideality factor, series resistance and interface states density were strongly dependent on temperature. Furthermore, the capacitance-voltage (C-V) characteristics of the device were investigated at various frequencies at room temperature. The responsivity (R), detectivity (D*) and rectification ratio (RR) values of the Co/Chitosan/p-Si/Al heterojunction were found to be as a function of illumination intensity. The experimental results show that the fabricated device with chitosan thin film interlayer can be used in various optoelectronic applications, especially applications in low temperature switching devices, energy generation, photodiode and photodetector.Öğe Phenol red based hybrid photodiode for optical detector applications(Pergamon-Elsevier Science Ltd, 2020) Kacus, Hatice; Sahin, Yilmaz; Aydogan, Sakir; Incekara, Umit; Yilmaz, Mehmet; Biber, MehmetIn this study, the phenol red (PR) dye film has been deposited on n-type silicon wafer and SEM, XRD measurements of the film have taken. Then, the PR/n-Si photodiode has been fabricated and (dark) electrical and photoresponse characterization has been analysed. The current-Voltage (I-V) measurements have been carried out at varied light power ranging from 100 mW/cm 2 to 400 mW/cm(2). Rectification ratios (RR) have been determined as a function of illumination intensities and they are determined as 115.47 for 100 mW/cm(2) and 30.26 for 400 100 mW/cm(2), respectively. The ideality factor and the barrier height of the Co/PR/n-Si photodiode have been determined as 2.80 and 0.52 eV, respectively in dark. Therefore, it has been seen that the PR/n-Si photodiode performances are strongly dependent on the incident optical power. Namely, the current density has increased remarkably with the power of light at the same reverse bias voltage and this behavior is explained by strong capability of converting a light signal into an electrical for the PR/n-Si photodiode device. Responsivity (R) and detectivity (D*) of the PR/n-Si photodiode are also plotted as a function of illumination intensities for reverse biases and it is found that both parameters are dependent on the illumination intensity. Finally, the capacitance-voltage (C-V) characteristics of the device have been carried out at various frequencies. Obtained experimental results indicate that the PR dye can be used in various optoelectronic applications.Öğe Photo-sensor characteristics of tannic acid (C76H52O46)/n-Si hybrid bio-photodiode for visible and UV lights detection(Elsevier Sci Ltd, 2022) Yildirim, Fatma; Orhan, Zeynep; Taskin, Mesut; Incekara, Umit; Biber, Mehmet; Aydogan, S.We present the electo-optical characterization of tannic acid (TA)/n-Si heterojunction for visible and UV lights (365 nm and 395 nm). The TA was deposited on n-Si by spin coating. The morphological and structural analyses of TA film were carried out by Scanning Electron Microscopy (SEM) and Energy-dispersive X-ray (EDX) analyses, respectively. The electro-optical performance of the TA/n-Si bio-photodiode were investigated by I-V measurements for 10 mW/cm(2), 15 mW/cm(2), 20 mW/cm(2) and 30 mW/cm(2) visible light intensities in addition to UV light. Light-dependent the responsivity, ON/OFF ratio, detectivity, shunt resistance and series resistance were calculated. Maximum values of responsivity, detectivity and ON/OFF ratio were determined as 11.9 mA/W (-1.5 V), 3.2 x 109 Jones (at-0.42 V) and 194 (30 mW/cm2) (AM 1.5 G), at-2 V respectively. Whereas, they were determined to be 0.1 A/W, 4 x 109 Jones and 14977, respectively for UV light. Furthermore, the dielectric properties of the TA/n-Si heterostructure also were investigated from the dark Capacitance/Conductance-Voltage measurements. It was seen that both real and imaginary parts of the dielectric constants was frequency dependent. Experimental results show that the TA/n-Si device with a high rectification ratio of 2263 is a potential candidate for detecting visible and UV lights.