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Öğe A comparative study on the effect of monodisperse Au and Ag nanoparticles on the performance of organic photovoltaic devices(Elsevier, 2021) Kacus, Hatice; Metin, Onder; Sevim, Melike; Biber, Mehmet; Baltakesmez, Ali; Aydogan, SakirThe monodisperse Au (similar to 5 nm) and Ag (similar to 3 nm) nanoparticles used in this study were obtained using surfactant-assistant solvothermal methods and characterized by XRD TEM and SEM. Then, these nanoparticles were embedded into the P3HT:PCBM photoactive layer at different ratios and the effects of the nanoparticles on the performance of the organic solar cells have been studied by varying the loading percent of the NPs in the range of 0.5-2 wt%. The best solar cell composition was determined to be 1 wt% for Au NPs and 0.5 wt% for Ag NPs. Optical absorption spectrum of P3HT:PCBM, P3HT:PCBM:AuNPs and P3HT:PCBM:AgNPs active layers were obtained using UV-visible spectroscopy. The J-V plots of ITO/PEDOT:PSS/P3HT:PCBM/LiF/Al solar cells having 1.10(-6) m(2) OSC area and with different Au NPs and Ag NPs loading ratios in the P3HT:PCBM were obtained under air mass (AM) 1.5G illumination. Open circuit voltage, short-circuit current density, fill factor, and power conversion efficiency of the OSC were calculated. The highest PCE values were obtained as 3.35% for Au NPs and as 3.50% for Ag NPs doped devices. This increase in PCEs was explained by a plasmonic effect that stems from the metallic NPs.Öğe On thermal and optical sensor applications of chitosan molecule in the Co/Chitosan/p-Si hybrid heterojunction design(Springer, 2021) Kacus, Hatice; Aydogan, Sakir; Incekara, Umit; Yilmaz, Mehmet; Biber, MehmetCo/Chitosan/p-Si/Al and Co/p-Si devices were made and barrier height and ideality factor values of both devices were determined at room temperature (dark conditions). After the chitosan interlayer was found to improve the device, the thermal and photosensivity properties of the Co/Chitosan/p-Si/Al device were investigated in detail. The current-voltage measurements of Co/Chitosan/p-Si/Al heterojunction were performed in temperature range of 100-460 K and illumination intensity range of 100-400 mW/cm(2). It was seen that the device parameters such as barrier height, ideality factor, series resistance and interface states density were strongly dependent on temperature. Furthermore, the capacitance-voltage (C-V) characteristics of the device were investigated at various frequencies at room temperature. The responsivity (R), detectivity (D*) and rectification ratio (RR) values of the Co/Chitosan/p-Si/Al heterojunction were found to be as a function of illumination intensity. The experimental results show that the fabricated device with chitosan thin film interlayer can be used in various optoelectronic applications, especially applications in low temperature switching devices, energy generation, photodiode and photodetector.Öğe Phenol red based hybrid photodiode for optical detector applications(Pergamon-Elsevier Science Ltd, 2020) Kacus, Hatice; Sahin, Yilmaz; Aydogan, Sakir; Incekara, Umit; Yilmaz, Mehmet; Biber, MehmetIn this study, the phenol red (PR) dye film has been deposited on n-type silicon wafer and SEM, XRD measurements of the film have taken. Then, the PR/n-Si photodiode has been fabricated and (dark) electrical and photoresponse characterization has been analysed. The current-Voltage (I-V) measurements have been carried out at varied light power ranging from 100 mW/cm 2 to 400 mW/cm(2). Rectification ratios (RR) have been determined as a function of illumination intensities and they are determined as 115.47 for 100 mW/cm(2) and 30.26 for 400 100 mW/cm(2), respectively. The ideality factor and the barrier height of the Co/PR/n-Si photodiode have been determined as 2.80 and 0.52 eV, respectively in dark. Therefore, it has been seen that the PR/n-Si photodiode performances are strongly dependent on the incident optical power. Namely, the current density has increased remarkably with the power of light at the same reverse bias voltage and this behavior is explained by strong capability of converting a light signal into an electrical for the PR/n-Si photodiode device. Responsivity (R) and detectivity (D*) of the PR/n-Si photodiode are also plotted as a function of illumination intensities for reverse biases and it is found that both parameters are dependent on the illumination intensity. Finally, the capacitance-voltage (C-V) characteristics of the device have been carried out at various frequencies. Obtained experimental results indicate that the PR dye can be used in various optoelectronic applications.Öğe Role of the Au and Ag nanoparticles on organic solar cells based on P3HT:PCBM active layer(Springer Heidelberg, 2020) Kacus, Hatice; Biber, Mehmet; Aydogan, SakirIn this article, P3HT:PCBM blend active layer was incorporated with Au and Ag nanoparticles (NPs) for different concentration to investigate the effects of the NPs on the performance organic solar cells (OSCs) with ITO/PEDOT:PSS/P3HT:PCBM:NPs/LiF/Al design. The active layer was analyzed by AFM, SEM and XRD measurements. Optical energy gap of P3HT:PCBM (undoped) and P3HT:PCBM (doped) active layers were obtained using UV-visible spectroscopy for different concentrations. The photovoltaic current density-voltage measurements were carried out under air mass (AM) 1.5G solar simulation. The OSC whose active layer undoped, gave the J(sc) of 17.09 mA/cm(2), V-oc of 0.48 V, FF of 45%, and PCE of 2.11%. Whereas, the highest values of PCE were calculated as 3.11% for doped with Au NPs (1.5 wt%) and as 3.20% for Ag NPs (0.5 wt%), respectively. In summary, Au and Ag NPs created strong local electric field enhancements and caused to a surface plasmonic effect in the active layer for some concentrations and improved the device's PCE.
