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    Boric acid inhibits alveolar bone loss in rats by affecting RANKL and osteoprotegerin expression
    (Wiley, 2014) Saglam, M.; Hatipoglu, M.; Koseoglu, S.; Esen, H. H.; Kelebek, S.
    Background and Objective: The goal of the present study was to evaluate the effects of systemic boric acid on the levels of expression of RANKL and osteoprotegerin (OPG) and on histopathologic and histometric changes in a rat periodontitis model. Material and Methods: Twenty-four Wistar rats were divided into three groups of eight animals each: nonligated (NL); ligature only (LO); and ligature plus treatment with boric acid (BA) (3 mg/kg per day for 11 d). A 4/0 silk suture was placed in a subgingival position around the mandibular right first molars; after 11 d the rats were killed, and alveolar bone loss in the first molars was histometrically determined. Periodontal tissues were examined histopathologically to assess the differences among the study groups. RANKL and OPG were detected immunohistochemically. Results: Alveolar bone loss was significantly higher in the LO group than in the BA and NL groups (p < 0.05). The number of inflammatory infiltrate and osteoclasts in the LO group was significantly higher than that in the NL and BA groups (p < 0.05). The numbers of osteoblasts in LO and BA groups were significantly higher compared with NL group (p < 0.05). There were significantly more RANKL-positive cells in the LO group than in the BA and NL groups (p < 0.05). There was a higher number of OPG-positive cells in the BA group than in the LO and NL groups (p < 0.05). Conclusion: The present study shows that systemic administration of boric acid may reduce alveolar bone loss by affecting the RANKL/OPG balance in periodontal disease in rats.
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    The electrical current characteristics of thermally annealed Co/anodic oxide layer/n-GaAs sandwich structures
    (World Scientific Publ Co Pte Ltd, 2019) Yildirm, N.; Turut, A.; Biber, M.; Saglam, M.; Guzeldir, B.
    The Co/anodic oxide layer/n-GaAs MOS structures have been fabricated by us. The MOS structures have shown an excellent rectifying behavior before and after thermal annealing of 500 degrees C for 2 min. It has been stated in the literature that the thermal annealing at a relatively low-temperature can improve the quality and performance of the anodic MOS structure. The current-voltage (I-V) measurements of the annealed MOS structure have been attempted in the measurement temperature range 60-320 K with the steps of 20 K. The I-V plot at 300 K has given the diode parameter values as barrier height (Phi(b0) = 0.96 eV and ideality factor n = 1.22, diode series resistance R-s = 124 Omega for the annealed sample, and (Phi(b0) = 0.87 eV and n = 2.11, R-s = 204 Omega for the nonannealed structure. A mean tunneling potential barrier value of 0.59 eV for the anodic oxide layer at the Co/n-GaAs interface has been calculated from the current- voltage-temperature curves. Furthermore, Phi(b0)(T) versus (2kT)(-1) curve has followed a double Gaussian distribution (GD) of the barrier heights. It has been stated that the double GD may be originated from the presence of the surface patches and phases arisen at the anodic oxide layer/n-GaAs interface.
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    Interleukin-33 could play an important role in the pathogenesis of periodontitis
    (Wiley, 2015) Koseoglu, S.; Hatipoglu, M.; Saglam, M.; Enhos, S.; Esen, H. H.
    Background and ObjectiveInterleukin-33 (IL-33) controls T-helper type 2 (Th2) cytokines and the development of mast cells. This study aimed to investigate the expression of IL-33 and its association with RANKL and osteoprotegerin (OPG) in periodontal health and experimental periodontitis. Material and MethodsEighteen Wistar rats were assigned to two study groups of nine animals each: ligature only (LO) and nonligated (NL). Silk sutures were placed subgingivally, surrounding the right lower first molars. The animals were killed on day 11 after ligature placement, and the alveolar bone loss at the first molars was determined histometrically. Periodontal tissues were examined histopathologically to evaluate the differences between the groups. The expression of IL-33, RANKL and OPG was detected immunohistochemically. ResultsThe LO group showed significantly greater alveolar bone loss compared with the NL group (p<0.05). The numbers of osteoclasts, osteoblasts and inflammatory cells were significantly higher in the LO group compared with the NL group (p<0.05). Osteoblastic activity was significantly lower in the LO group than in the NL group (p<0.05). There was significantly higher expression of IL-33 and RANKL and a greater number of OPG-positive cells in the LO group (p<0.05). IL-33 expression showed a positive correlation with RANKL expression and with the number of mast cells (p<0.05). ConclusionThe experimental periodontitis group exhibited increased expression of IL-33 and RANKL compared with the healthy group. Additionally, there was a positive correlation between these expressions. According to these results, IL-33 could be associated with the pathogenesis of periodontal disease.
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    Interpretation of the I-V, C-V and G/?-V characteristics of the Au/ZnS/n-GaAs/In structure depending on annealing temperature
    (Elsevier, 2021) Baltakesmez, A.; Guzeldir, B.; Saglam, M.; Biber, M.
    The Zinc Sulphide (ZnS) thin film, which is included in the Au/n-GaAs/In diode as the interface layer, was grown on the n-GaAs semiconductor substrate by the spray pyrolysis method. First, to reveal some structural, surface and optical properties of the ZnS thin film, XRD, SEM and absorption measurements were taken. It was determined that the ZnS thin film completely covering the surface of the n-GaAs semiconductor substrate has a hexagonal structure and a forbidden energy range of 3.83 eV. Later, the current-voltage (I?V), the capacitancevoltage (C?V) and the conductance-voltage (G/?-V) measurements of the Au/ZnS/n-GaAs/In structure were taken at room temperature, and various important parameters of the structure were calculated with different methods. In order to reveal the effects of annealing temperature on the I?V, C?V and G/?-V measurements of Au/ ZnS/n-GaAs/In structure, the device was annealed at 100, 200 and 300 ?C respectively for 5 min in nitrogen gas environment. The characteristic parameters were calculated again and the results were interpreted comparatively. At the same time, with the help of the C?V and G/?-V characteristics, the dependence on applied bias voltage and frequency of the parameters such as dielectric constant, dielectric loss, loss tangent, ac electrical conductivity and real and imaginary part of electric modulus of the diode have been revealed. After thermal annealing at 200 ?C, it has been determined that the ideality factor, turn-on voltage and leakage current values are at minimum level and the barrier height and rectification ratio values are at maximum level. In other words, it has been revealed that the optimum thermal annealing temperature for this device is 200 ?C.