The electrical properties of ZnO/Si heterojunction diode depending on thin film thickness

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dc.contributor.authorAkin, Ummuhan
dc.contributor.authorHouimi, Amina
dc.contributor.authorGezgin, Bahri
dc.contributor.authorGundogdu, Yasemin
dc.contributor.authorKilic, Sumeyye
dc.contributor.authorMercimek, Bedrettin
dc.contributor.authorBerber, Adnan
dc.date.accessioned2024-02-23T14:00:09Z
dc.date.available2024-02-23T14:00:09Z
dc.date.issued2022
dc.departmentNEÜen_US
dc.description.abstractIn this work, ZnO thin films have been produced on p-Si wafer depending on number of laser pulses applied using pulse laser deposition (PLD) technique at room temperature conditions. Three different thicknesses of ZnO thin films (ZnO1, ZnO2 and ZnO3) have been produced by applying 18,000, 36,000 and 54,000 laser pulses and thicknesses of these produced three thin films have been measured to be 41 nm, 70 nm, 197 nm, respectively. It is observed in this work that while thicknesses of ZnO thin films increases, crystal structure of thin films develops, their grain size increase while their band gaps decrease. Ag/ZnO/Si/Au heterojunction diodes have been produced based on ZnO1, ZnO2 and ZnO3 thin films. After that, effect of thickness of thin film on electrical properties of diodes produced depending on number of laser pulses has been analyzed in detail. I-V characteristics of ZnO/Si heterojunction diodes produced have also been measured in darkness environment and under illumination conditions (AM 1.5 solar radiation of 80 mW/cm(2)) and results obtained have been interpreted and a conclusion has been made in this work. Furthermore, ideality factors, barrier heights and serial resistivities of these diodes have been calculated using conventional thermionic emission theory, Norde and Cheung-Cheung methods and then results obtained from analytical methods have been interpreted in detail in the present article. ZnO heterojunction diodes have exhibited photovoltaic properties under illumination conditions. It has been observed that as thickness of ZnO thin film is increased, J(sc) and eta values of the hetero junction diodes are increased. ZnO-3A hetero junction diode has exhibited the most improved photovoltaic performance. We have also theoretically investigated photo-electric properties of ZnO-3A heterojunction diode using SCAPS-1D packed software. The resulted J-V characteristics have been found very similar to measured counterparts.en_US
dc.description.sponsorshipInfrastructure and Selcuk University, Scientific Research Projects Coordination (BAP) Unit for grands [14401025]en_US
dc.description.sponsorshipAuthors kindly would like to thank, Selcuk University, High Technology Research and Application Center and Selcuk University, Selcuk University, Laser Induced Proton Therapy Application and Research Center for supplying with Infrastructure and Selcuk University, Scientific Research Projects Coordination (BAP) Unit for grands via projects with references of 14401025. Dr. Marc Burgelman's group, University of Gent, Belgium for providing SCAPS-1D simulation program.en_US
dc.identifier.doi10.1007/s40042-022-00499-7
dc.identifier.endpage149en_US
dc.identifier.issn0374-4884
dc.identifier.issn1976-8524
dc.identifier.issue2en_US
dc.identifier.scopus2-s2.0-85130278615en_US
dc.identifier.scopusqualityQ4en_US
dc.identifier.startpage139en_US
dc.identifier.urihttps://doi.org/10.1007/s40042-022-00499-7
dc.identifier.urihttps://hdl.handle.net/20.500.12452/11470
dc.identifier.volume81en_US
dc.identifier.wosWOS:000799520100002en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherKorean Physical Socen_US
dc.relation.ispartofJournal Of The Korean Physical Societyen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectZno Thin Filmen_US
dc.subjectHeterojunction Diodeen_US
dc.subjectPlden_US
dc.subjectIdeality Factoren_US
dc.subjectBarrier Heighten_US
dc.subjectSerial Resistivityen_US
dc.subjectScaps-1den_US
dc.titleThe electrical properties of ZnO/Si heterojunction diode depending on thin film thicknessen_US
dc.typeArticleen_US

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