The frequency dependent electrical properties of MIS structures with Mn-doped complexed interfacial layer

dc.contributor.authorBaris, B.
dc.contributor.authorYildiz, D. E.
dc.contributor.authorKaradeniz, S.
dc.contributor.authorKose, D. A.
dc.contributor.authorErdal, M. O.
dc.contributor.authorYildirim, M.
dc.date.accessioned2024-02-23T14:20:47Z
dc.date.available2024-02-23T14:20:47Z
dc.date.issued2023
dc.departmentNEÜen_US
dc.description.abstractIn this study, Mn doped complexes were produced and used as an interfacial layer in Au/Mn-complex/n-Si structure. For this aim, a mixed ligand complex was prepared and doped with manganese. The morphological investigations of these structures were fulfilled by using an Atomic Force Microscope. The analyzes showed that relatively smooth and well ordered surfaces. The fabricated devices were characterized using capacitance-voltage (C-V) and conductance-voltage (G/w-V). The electrical parameters such as dielectric ( e', e and tand), electrical modulus (M' and M), serial resistance (R-s), interface states (D-it) and ac conductivity (s (ac)) of fabricated Au/Mn-complex/n-Si structure were determined at various frequencies (1 kHz-1000 kHz) and voltages (-2 to 4V with steps 0.02 V), at room temperature and dark environment. Measurements have shown that capacitance and conductivity are highly frequency dependent. At low frequencies, the surface states have increased, but as the frequency increased, the values became too low to pin the Fermi level.en_US
dc.identifier.doi10.1088/1402-4896/acc9ee
dc.identifier.issn0031-8949
dc.identifier.issn1402-4896
dc.identifier.issue5en_US
dc.identifier.scopus2-s2.0-85163560429en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1088/1402-4896/acc9ee
dc.identifier.urihttps://hdl.handle.net/20.500.12452/13311
dc.identifier.volume98en_US
dc.identifier.wosWOS:000971862200001en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIop Publishing Ltden_US
dc.relation.ispartofPhysica Scriptaen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMn-Complexen_US
dc.subjectNicotinamideen_US
dc.subjectDielectricen_US
dc.subjectInterface Statesen_US
dc.subjectModulusen_US
dc.titleThe frequency dependent electrical properties of MIS structures with Mn-doped complexed interfacial layeren_US
dc.typeArticleen_US

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