Investigation of electrical properties of Ni/Crystal Violet (C25H30CIN3)/n-Si/Al diode as a function of temperature

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dc.contributor.authorDeniz, Ali Riza
dc.contributor.authorCaldiran, Zakir
dc.contributor.authorBiber, Mehmet
dc.contributor.authorIncekara, Umit
dc.contributor.authorAydogan, Sakir
dc.date.accessioned2024-02-23T14:12:32Z
dc.date.available2024-02-23T14:12:32Z
dc.date.issued2018
dc.departmentNEÜen_US
dc.description.abstractIn this study, Crystal Violet material was used for interface layer of Schottky diode applications. Firtly, chemical cleaning process have been made for boron doped n-Si crystals. After, Al metal was coated on the one surface of crystals by thermal evaporation and crystal violet materials were coated on other surface of crystals with spin coating method (coating parameters; 800 rpm for 60 s). Lastly, Ni metal was coated on Crystal Violet by sputtering. So, we obtained the Ni/Crystal Violet/n-Si/Al Schottky type diode. After the fabrication process of diode, the current-voltage (I-V) and capacity-voltage (C-V) measurements of Ni/Crystal Violet/n-Si/Al Schottky type diode were taken for various temperatures. The some basic diode parameters such as ideality factor (n), barrier height (Phi(b)) and series resistance (Rs) of Ni/Crystal Violet/n-Si/Al were calculated from I-V measurements using different methods (Thermionic Emission, Cheung and Norde functions). Also, diode parameters such as Fermi energy level, diffusion potential, carrier concentration and barrier height were calculated from the C-V measurements of diode as a function of temperature. (C) 2018 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.jallcom.2018.05.295
dc.identifier.endpage628en_US
dc.identifier.issn0925-8388
dc.identifier.issn1873-4669
dc.identifier.scopus2-s2.0-85048192059en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage622en_US
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2018.05.295
dc.identifier.urihttps://hdl.handle.net/20.500.12452/12098
dc.identifier.volume763en_US
dc.identifier.wosWOS:000442484300071en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofJournal Of Alloys And Compoundsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCrystal Violeten_US
dc.subjectSchottky Diodeen_US
dc.subjectThermionic Emissionen_US
dc.subjectNordeen_US
dc.subjectCurrent-Voltageen_US
dc.subjectCapacity-Voltageen_US
dc.titleInvestigation of electrical properties of Ni/Crystal Violet (C25H30CIN3)/n-Si/Al diode as a function of temperatureen_US
dc.typeArticleen_US

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