Investigation of electrical properties of Ni/Crystal Violet (C25H30CIN3)/n-Si/Al diode as a function of temperature
dc.contributor.author | Deniz, Ali Riza | |
dc.contributor.author | Caldiran, Zakir | |
dc.contributor.author | Biber, Mehmet | |
dc.contributor.author | Incekara, Umit | |
dc.contributor.author | Aydogan, Sakir | |
dc.date.accessioned | 2024-02-23T14:12:32Z | |
dc.date.available | 2024-02-23T14:12:32Z | |
dc.date.issued | 2018 | |
dc.department | NEÜ | en_US |
dc.description.abstract | In this study, Crystal Violet material was used for interface layer of Schottky diode applications. Firtly, chemical cleaning process have been made for boron doped n-Si crystals. After, Al metal was coated on the one surface of crystals by thermal evaporation and crystal violet materials were coated on other surface of crystals with spin coating method (coating parameters; 800 rpm for 60 s). Lastly, Ni metal was coated on Crystal Violet by sputtering. So, we obtained the Ni/Crystal Violet/n-Si/Al Schottky type diode. After the fabrication process of diode, the current-voltage (I-V) and capacity-voltage (C-V) measurements of Ni/Crystal Violet/n-Si/Al Schottky type diode were taken for various temperatures. The some basic diode parameters such as ideality factor (n), barrier height (Phi(b)) and series resistance (Rs) of Ni/Crystal Violet/n-Si/Al were calculated from I-V measurements using different methods (Thermionic Emission, Cheung and Norde functions). Also, diode parameters such as Fermi energy level, diffusion potential, carrier concentration and barrier height were calculated from the C-V measurements of diode as a function of temperature. (C) 2018 Elsevier B.V. All rights reserved. | en_US |
dc.identifier.doi | 10.1016/j.jallcom.2018.05.295 | |
dc.identifier.endpage | 628 | en_US |
dc.identifier.issn | 0925-8388 | |
dc.identifier.issn | 1873-4669 | |
dc.identifier.scopus | 2-s2.0-85048192059 | en_US |
dc.identifier.scopusquality | Q1 | en_US |
dc.identifier.startpage | 622 | en_US |
dc.identifier.uri | https://doi.org/10.1016/j.jallcom.2018.05.295 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12452/12098 | |
dc.identifier.volume | 763 | en_US |
dc.identifier.wos | WOS:000442484300071 | en_US |
dc.identifier.wosquality | Q1 | en_US |
dc.indekslendigikaynak | Web of Science | en_US |
dc.indekslendigikaynak | Scopus | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier Science Sa | en_US |
dc.relation.ispartof | Journal Of Alloys And Compounds | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Crystal Violet | en_US |
dc.subject | Schottky Diode | en_US |
dc.subject | Thermionic Emission | en_US |
dc.subject | Norde | en_US |
dc.subject | Current-Voltage | en_US |
dc.subject | Capacity-Voltage | en_US |
dc.title | Investigation of electrical properties of Ni/Crystal Violet (C25H30CIN3)/n-Si/Al diode as a function of temperature | en_US |
dc.type | Article | en_US |