Ultraviolet radiation-induced photovoltaic action in ?-CuI/?-Ga2O3 heterojunction

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dc.contributor.authorAyhan, Muhammed Emre
dc.contributor.authorShinde, Mandar
dc.contributor.authorTodankar, Bhagyashri
dc.contributor.authorDesai, Pradeep
dc.contributor.authorRanade, Ajinkya K.
dc.contributor.authorTanemura, Masaki
dc.contributor.authorKalita, Golap
dc.date.accessioned2024-02-23T14:13:09Z
dc.date.available2024-02-23T14:13:09Z
dc.date.issued2020
dc.departmentNEÜen_US
dc.description.abstractWe report on the fabrication of gamma-phase copper iodide (gamma-Cul) and beta-gallium oxide (beta-Ga2O3) heterostructure device and obtaining the ultraviolet (UV) radiation responsive photovoltaic action. The crystalline gamma-Cul with predominant (1 1 1) plane orientation was deposited on the beta-Ga2O3 by thermal evaporation process under vacuum condition. The electrical analysis revealed that the gamma-Cul/gamma-Ga2O3 heterojunction possess an excellent rectifying diode characteristic with high rectification ratio and turn-on voltage. The fabricated heterojunction device showed a photovoltaic action under solar-blind UV irradiation (254 nm) with outstanding photovoltage of 0.706 V and photocurrent of 2.49 mA/W. The device also showed a photovoltaic action under illumination of 365 nm and 300-400 nm wavelength of UV light, corresponding to absorption due to the gamma-Cul layer. The UV irradiation-induced photovoltaic action in the gamma-Cul/beta-Ga2O3 with outstanding photovoltage and excellent diode characteristics can be significant for self-powered UV photodetector applications. (C) 2019 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipJapan Society for the Promotion of Science [19K05267]; Grants-in-Aid for Scientific Research [19K05267] Funding Source: KAKENen_US
dc.description.sponsorshipThis work is supported by a Grant-in-Aid (C) from the Japan Society for the Promotion of Science (Grant No. 19K05267). The authors would like to thank NGK Insulators Ltd. Nagoya, Japan, for providing the beta-Ga2O3 sample.en_US
dc.identifier.doi10.1016/j.matlet.2019.127074
dc.identifier.issn0167-577X
dc.identifier.issn1873-4979
dc.identifier.scopus2-s2.0-85076509457en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1016/j.matlet.2019.127074
dc.identifier.urihttps://hdl.handle.net/20.500.12452/12328
dc.identifier.volume262en_US
dc.identifier.wosWOS:000506197600039en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofMaterials Lettersen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectBeta-Gallium Oxideen_US
dc.subjectCopper Iodideen_US
dc.subjectElectrical Propertiesen_US
dc.subjectPhotovoltaic Actionen_US
dc.subjectSemiconductorsen_US
dc.subjectSolar-Blind Radiationen_US
dc.titleUltraviolet radiation-induced photovoltaic action in ?-CuI/?-Ga2O3 heterojunctionen_US
dc.typeArticleen_US

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