Ultraviolet radiation-induced photovoltaic action in ?-CuI/?-Ga2O3 heterojunction
dc.contributor.author | Ayhan, Muhammed Emre | |
dc.contributor.author | Shinde, Mandar | |
dc.contributor.author | Todankar, Bhagyashri | |
dc.contributor.author | Desai, Pradeep | |
dc.contributor.author | Ranade, Ajinkya K. | |
dc.contributor.author | Tanemura, Masaki | |
dc.contributor.author | Kalita, Golap | |
dc.date.accessioned | 2024-02-23T14:13:09Z | |
dc.date.available | 2024-02-23T14:13:09Z | |
dc.date.issued | 2020 | |
dc.department | NEÜ | en_US |
dc.description.abstract | We report on the fabrication of gamma-phase copper iodide (gamma-Cul) and beta-gallium oxide (beta-Ga2O3) heterostructure device and obtaining the ultraviolet (UV) radiation responsive photovoltaic action. The crystalline gamma-Cul with predominant (1 1 1) plane orientation was deposited on the beta-Ga2O3 by thermal evaporation process under vacuum condition. The electrical analysis revealed that the gamma-Cul/gamma-Ga2O3 heterojunction possess an excellent rectifying diode characteristic with high rectification ratio and turn-on voltage. The fabricated heterojunction device showed a photovoltaic action under solar-blind UV irradiation (254 nm) with outstanding photovoltage of 0.706 V and photocurrent of 2.49 mA/W. The device also showed a photovoltaic action under illumination of 365 nm and 300-400 nm wavelength of UV light, corresponding to absorption due to the gamma-Cul layer. The UV irradiation-induced photovoltaic action in the gamma-Cul/beta-Ga2O3 with outstanding photovoltage and excellent diode characteristics can be significant for self-powered UV photodetector applications. (C) 2019 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | Japan Society for the Promotion of Science [19K05267]; Grants-in-Aid for Scientific Research [19K05267] Funding Source: KAKEN | en_US |
dc.description.sponsorship | This work is supported by a Grant-in-Aid (C) from the Japan Society for the Promotion of Science (Grant No. 19K05267). The authors would like to thank NGK Insulators Ltd. Nagoya, Japan, for providing the beta-Ga2O3 sample. | en_US |
dc.identifier.doi | 10.1016/j.matlet.2019.127074 | |
dc.identifier.issn | 0167-577X | |
dc.identifier.issn | 1873-4979 | |
dc.identifier.scopus | 2-s2.0-85076509457 | en_US |
dc.identifier.scopusquality | Q2 | en_US |
dc.identifier.uri | https://doi.org/10.1016/j.matlet.2019.127074 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12452/12328 | |
dc.identifier.volume | 262 | en_US |
dc.identifier.wos | WOS:000506197600039 | en_US |
dc.identifier.wosquality | Q2 | en_US |
dc.indekslendigikaynak | Web of Science | en_US |
dc.indekslendigikaynak | Scopus | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier | en_US |
dc.relation.ispartof | Materials Letters | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Beta-Gallium Oxide | en_US |
dc.subject | Copper Iodide | en_US |
dc.subject | Electrical Properties | en_US |
dc.subject | Photovoltaic Action | en_US |
dc.subject | Semiconductors | en_US |
dc.subject | Solar-Blind Radiation | en_US |
dc.title | Ultraviolet radiation-induced photovoltaic action in ?-CuI/?-Ga2O3 heterojunction | en_US |
dc.type | Article | en_US |