Fast optoelectronic gas sensing with p-type V2O5/WS2/Si heterojunction thin film

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dc.contributor.authorBasyooni, Mohamed A.
dc.contributor.authorZaki, Shrouk E.
dc.contributor.authorEker, Yasin Ramazan
dc.date.accessioned2024-02-23T14:13:08Z
dc.date.available2024-02-23T14:13:08Z
dc.date.issued2023
dc.departmentNEÜen_US
dc.description.abstractThe efficiency of ultraviolet (UV) illumination in gas adsorption/desorption is remarkable due to its capacity to activate and energize CO2 molecules, rendering them more reactive and prone to surface interactions. A heterojunction device for room-temperature optoelectronic gas sensing has been fabricated. This was achieved through the deposition of an orthorhombic vanadium pentoxide (V2O5) thin film onto a wafer scale 2D p-type tungsten disulfide (WS2)/silicon (Si). The incorporation of the V2O5 layer brings about alterations in WS2's electronic properties, resulting in increased energy states for photo-generated carriers and a promising approach to enhance the intensity of exciton and trion peaks. Specifically, the WS2 film exhibits a carrier concentration of 3.67 x 1018 cm-3, while incorporating the V2O5 layer significantly raises this concentration to 1.20 x 1020 cm-3. The experiments reveal a rapid response time of 0.4 s and a recovery time of 0.2 s, respectively, demonstrating the swift desorption capability of the device in a CO2 environment. Remarkably, this device exhibits high optoelectronic performances, boasting a detectivity of 1.22 x 1013 Jones and a responsivity of 177.21 A/W. These findings have the potential to advance the development of improved gas-sensing devices, offering heightened sensitivity and selectivity in diverse optoelectronic applications.en_US
dc.identifier.doi10.1016/j.matchemphys.2023.128491
dc.identifier.issn0254-0584
dc.identifier.issn1879-3312
dc.identifier.scopus2-s2.0-85172418069en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1016/j.matchemphys.2023.128491
dc.identifier.urihttps://hdl.handle.net/20.500.12452/12324
dc.identifier.volume310en_US
dc.identifier.wosWOS:001088607300001en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofMaterials Chemistry And Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectOptoelectronic Gas Sensingen_US
dc.subjectWs2en_US
dc.subjectThin Filmen_US
dc.subjectTwo-Dimensional Transition Metalen_US
dc.subjectDichalcogenidesen_US
dc.titleFast optoelectronic gas sensing with p-type V2O5/WS2/Si heterojunction thin filmen_US
dc.typeArticleen_US

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