The electrical current characteristics of thermally annealed Co/anodic oxide layer/n-GaAs sandwich structures

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dc.contributor.authorYildirm, N.
dc.contributor.authorTurut, A.
dc.contributor.authorBiber, M.
dc.contributor.authorSaglam, M.
dc.contributor.authorGuzeldir, B.
dc.date.accessioned2024-02-23T14:26:25Z
dc.date.available2024-02-23T14:26:25Z
dc.date.issued2019
dc.departmentNEÜen_US
dc.description.abstractThe Co/anodic oxide layer/n-GaAs MOS structures have been fabricated by us. The MOS structures have shown an excellent rectifying behavior before and after thermal annealing of 500 degrees C for 2 min. It has been stated in the literature that the thermal annealing at a relatively low-temperature can improve the quality and performance of the anodic MOS structure. The current-voltage (I-V) measurements of the annealed MOS structure have been attempted in the measurement temperature range 60-320 K with the steps of 20 K. The I-V plot at 300 K has given the diode parameter values as barrier height (Phi(b0) = 0.96 eV and ideality factor n = 1.22, diode series resistance R-s = 124 Omega for the annealed sample, and (Phi(b0) = 0.87 eV and n = 2.11, R-s = 204 Omega for the nonannealed structure. A mean tunneling potential barrier value of 0.59 eV for the anodic oxide layer at the Co/n-GaAs interface has been calculated from the current- voltage-temperature curves. Furthermore, Phi(b0)(T) versus (2kT)(-1) curve has followed a double Gaussian distribution (GD) of the barrier heights. It has been stated that the double GD may be originated from the presence of the surface patches and phases arisen at the anodic oxide layer/n-GaAs interface.en_US
dc.description.sponsorshipTurkish Scientific and Technological Research Council of Turkey (TUBITAK) [105T487]; Ataturk University [BAP 2006/51]en_US
dc.description.sponsorshipThis work was supported by The Turkish Scientific and Technological Research Council of Turkey (TUBITAK) (Project No. 105T487) and Ataturk University (Project No. BAP 2006/51). The authors wish to thank TUBITAK and Ataturk University.en_US
dc.identifier.doi10.1142/S0217979219502321
dc.identifier.issn0217-9792
dc.identifier.issn1793-6578
dc.identifier.issue21en_US
dc.identifier.scopus2-s2.0-85072092140en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.urihttps://doi.org/10.1142/S0217979219502321
dc.identifier.urihttps://hdl.handle.net/20.500.12452/14169
dc.identifier.volume33en_US
dc.identifier.wosWOS:000487187900004en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherWorld Scientific Publ Co Pte Ltden_US
dc.relation.ispartofInternational Journal Of Modern Physics Ben_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMetal/Oxide Layer/Semiconductor (Mos) Structuresen_US
dc.subjectAnodic Oxidationen_US
dc.subjectAnodization Processen_US
dc.subjectGaas Semiconductoren_US
dc.subjectThermal Annealingen_US
dc.subjectThe Current-Voltage Characteristics Of Mos Structuresen_US
dc.titleThe electrical current characteristics of thermally annealed Co/anodic oxide layer/n-GaAs sandwich structuresen_US
dc.typeArticleen_US

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