Temperature dependent current-voltage characteristics of Al/TiO2/n-Si and Al/Cu:TiO2/n-Si devices
dc.contributor.author | Erdal, Mehmet Okan | |
dc.contributor.author | Kocyigit, Adem | |
dc.contributor.author | Yildirim, Murat | |
dc.date.accessioned | 2024-02-23T14:13:18Z | |
dc.date.available | 2024-02-23T14:13:18Z | |
dc.date.issued | 2019 | |
dc.department | NEÜ | en_US |
dc.description.abstract | We fabricated undoped and Cu doped TiO2 thin films by spin coating technique and employed the films as interfacial oxide layer between the Al and n-type Si to investigate the effect of temperature on the Al/TiO2/n-Si and Al/Cu:TiO2/n-Si devices. For that aim, the I-V measurements were performed in the range of 50 K-400 K by 50 K interval. The devices exhibited good rectifying behavior and thermal response in a wide range temperature. Ideality factor, barrier height and series resistance were calculated from I-V measurements for various temperatures by thermionic emission theory, Norde and Cheung methods and discussed in the details. The obtained results revealed that the device parameters are a strong function of the temperature. The interface states (N-ss) were affected by the changing of the temperatures. The Al/TiO2/n-Si and Al/Cu:TiO2/n-Si devices can be performed for wide range temperatures in various technological applications. | en_US |
dc.description.sponsorship | Selcuk University BAP office [16401044]; Selcuk University | en_US |
dc.description.sponsorship | This work is supported by Selcuk University BAP office with Project Numbers 16401044. Authors would like to acknowledge the support of the Selcuk University for this research. | en_US |
dc.identifier.doi | 10.1016/j.mssp.2019.104620 | |
dc.identifier.issn | 1369-8001 | |
dc.identifier.issn | 1873-4081 | |
dc.identifier.scopus | 2-s2.0-85068973549 | en_US |
dc.identifier.scopusquality | Q1 | en_US |
dc.identifier.uri | https://doi.org/10.1016/j.mssp.2019.104620 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12452/12375 | |
dc.identifier.volume | 103 | en_US |
dc.identifier.wos | WOS:000483376900010 | en_US |
dc.identifier.wosquality | Q2 | en_US |
dc.indekslendigikaynak | Web of Science | en_US |
dc.indekslendigikaynak | Scopus | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier Sci Ltd | en_US |
dc.relation.ispartof | Materials Science In Semiconductor Processing | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Cu Doped Tio2 Thin Films | en_US |
dc.subject | Al/Tio2/N-Si | en_US |
dc.subject | Temperature-Dependent I-V Characteristics | en_US |
dc.subject | Spin Coating | en_US |
dc.title | Temperature dependent current-voltage characteristics of Al/TiO2/n-Si and Al/Cu:TiO2/n-Si devices | en_US |
dc.type | Article | en_US |