Photoresponse properties of coronene nanowires thin-film-based photodiode
Küçük Resim Yok
Tarih
2020
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The Al/CRNNW/n-Si device with a coronene nanowire (CRNNW) interlayer was fabricated by a physical vapor deposition technique and characterized under dark various illumination intensities viaI-Vmeasurements at room temperature. The device has exhibited rectifying behavior and the rectifying ratio values decreased from 1.16 x 10(3)to 1.44 at 4 V biases by increasing light intensity from 20 to 100 mW. The Al/CRNNW/n-Si device was characterized by various techniques such as thermionic emission theory, Norde, and Cheung technique, and device parameters were obtained. The ideality factor and barrier height values were determined as 21.33 and 0.75 eV, respectively, under dark condition from the thermionic emission theory. The series resistance of the device is obtained as 3090 ohm from the Norde method and 9840 ohm from the Cheung method for the dark condition. The current transport mechanism of the device was discussed in detail for various regions from lnI-lnVplot. The coronene layer can be thought of and improved as interfacial material for metal-semiconductor devices.
Açıklama
Anahtar Kelimeler
[Keyword Not Available]
Kaynak
Journal Of Materials Science-Materials In Electronics
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
31
Sayı
21
