Phenol red based hybrid photodiode for optical detector applications

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dc.contributor.authorKacus, Hatice
dc.contributor.authorSahin, Yilmaz
dc.contributor.authorAydogan, Sakir
dc.contributor.authorIncekara, Umit
dc.contributor.authorYilmaz, Mehmet
dc.contributor.authorBiber, Mehmet
dc.date.accessioned2024-02-23T14:16:19Z
dc.date.available2024-02-23T14:16:19Z
dc.date.issued2020
dc.departmentNEÜen_US
dc.description.abstractIn this study, the phenol red (PR) dye film has been deposited on n-type silicon wafer and SEM, XRD measurements of the film have taken. Then, the PR/n-Si photodiode has been fabricated and (dark) electrical and photoresponse characterization has been analysed. The current-Voltage (I-V) measurements have been carried out at varied light power ranging from 100 mW/cm 2 to 400 mW/cm(2). Rectification ratios (RR) have been determined as a function of illumination intensities and they are determined as 115.47 for 100 mW/cm(2) and 30.26 for 400 100 mW/cm(2), respectively. The ideality factor and the barrier height of the Co/PR/n-Si photodiode have been determined as 2.80 and 0.52 eV, respectively in dark. Therefore, it has been seen that the PR/n-Si photodiode performances are strongly dependent on the incident optical power. Namely, the current density has increased remarkably with the power of light at the same reverse bias voltage and this behavior is explained by strong capability of converting a light signal into an electrical for the PR/n-Si photodiode device. Responsivity (R) and detectivity (D*) of the PR/n-Si photodiode are also plotted as a function of illumination intensities for reverse biases and it is found that both parameters are dependent on the illumination intensity. Finally, the capacitance-voltage (C-V) characteristics of the device have been carried out at various frequencies. Obtained experimental results indicate that the PR dye can be used in various optoelectronic applications.en_US
dc.identifier.doi10.1016/j.sse.2020.107864
dc.identifier.issn0038-1101
dc.identifier.issn1879-2405
dc.identifier.scopus2-s2.0-85086577366en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1016/j.sse.2020.107864
dc.identifier.urihttps://hdl.handle.net/20.500.12452/12623
dc.identifier.volume171en_US
dc.identifier.wosWOS:000571910100010en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.relation.ispartofSolid-State Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectPhenol Reden_US
dc.subjectOrganic Photodiodeen_US
dc.subjectDetectivityen_US
dc.subjectPhotoresponsivityen_US
dc.titlePhenol red based hybrid photodiode for optical detector applicationsen_US
dc.typeArticleen_US

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