The variation of the features of SnO2 and SnO2:F thin films as a function of V dopant

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dc.contributor.authorTurgut, Guven
dc.contributor.authorSonmez, Erdal
dc.contributor.authorYilmaz, Mehmet
dc.contributor.authorCogenli, M. Selim
dc.contributor.authorYilmaz, Mucahit
dc.contributor.authorTurgut, Umit
dc.contributor.authorDilber, Refik
dc.date.accessioned2024-02-23T13:56:13Z
dc.date.available2024-02-23T13:56:13Z
dc.date.issued2014
dc.departmentNEÜen_US
dc.description.abstractV doped SnO2 and SnO2:F thin films were successfully deposited on glass substrates at 500 A degrees C with spray pyrolysis. It was observed that all films had SnO2 tetragonal rutile structure and the preferential orientation depended on spray solution chemistry (doping element and solvent type) by X-ray diffraction measurements. The lowest sheet resistance and the highest optical band gap, figure of merit, infrared (IR) reflectivity values of V doped SnO2 for ethanol and propane-2-ol solvents and V doped SnO2:F films were found to be 88.62 abroken vertical bar aEuro3.947 eV-1.02 x 10(-4) abroken vertical bar(-1)-65.49 %, 65.35 abroken vertical bar aEuro3.955 eV-8.54 x 10(-4) abroken vertical bar(-1)-72.58 %, 5.15 abroken vertical bar aEuro4.076 eV-6.15 x 10(-2) abroken vertical bar(-1)-97.32 %, respectively, with the electrical and optical measurements. Morphological properties of the films were investigated by atomic force microscope and scanning electron microscope measurements. From these analysis, the films consisted of nanoparticles and the film morphology depended on doping ratio/type and solvent type. It was observed pyramidal, polyhedron, needle-shaped and spherical grains on the films' surfaces. The films obtained in present study with these properties can be used as front contact for solar cells and it can be also one of appealing materials for other optoelectronic and IR coating applications.en_US
dc.description.sponsorshipAtaturk University Research Fund [2013/154, 2013/318, 2013/319, 2013/323]en_US
dc.description.sponsorshipOur study was supported by Ataturk University Research Fund, Project Numbers; 2013/154, 2013/318, 2013/319, 2013/323. Corresponding author (Guven Turgut) is grateful to Mustafa De'rman for technical support.en_US
dc.identifier.doi10.1007/s10854-014-1946-7
dc.identifier.endpage2828en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue6en_US
dc.identifier.scopus2-s2.0-84901915667en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage2808en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-014-1946-7
dc.identifier.urihttps://hdl.handle.net/20.500.12452/11130
dc.identifier.volume25en_US
dc.identifier.wosWOS:000335757800058en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal Of Materials Science-Materials In Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subject[Keyword Not Available]en_US
dc.titleThe variation of the features of SnO2 and SnO2:F thin films as a function of V dopanten_US
dc.typeArticleen_US

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