Positive and Negative Photoconductivity in Ir Nanofilm-Coated MoO3 Bias-Switching Photodetector

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dc.contributor.authorKabatas, Mohamed A. Basyooni-M.
dc.contributor.authorEn-nadir, Redouane
dc.contributor.authorRahmani, Khalid
dc.contributor.authorEker, Yasin Ramazan
dc.date.accessioned2024-02-23T14:35:15Z
dc.date.available2024-02-23T14:35:15Z
dc.date.issued2023
dc.departmentNEÜen_US
dc.description.abstractIn this study, we delved into the influence of Ir nanofilm coating thickness on the optical and optoelectronic behavior of ultrathin MoO3 wafer-scale devices. Notably, the 4 nm Ir coating showed a negative Hall voltage and high carrier concentration of 1.524 x 10(19) cm(-3) with 0.19 nm roughness. Using the Kubelka-Munk model, we found that the bandgap decreased with increasing Ir thickness, consistent with Urbach tail energy suggesting a lower level of disorder. Regarding transient photocurrent behavior, all samples exhibited high stability under both dark and UV conditions. We also observed a positive photoconductivity at bias voltages of >0.5 V, while at 0 V bias voltage, the samples displayed a negative photoconductivity behavior. This unique aspect allowed us to explore self-powered negative photodetectors, showcasing fast response and recovery times of 0.36/0.42 s at 0 V. The intriguing negative photoresponse that we observed is linked to hole self-trapping/charge exciton and Joule heating effects.en_US
dc.description.sponsorshipSelcuk University-Scientific Research Projects Coordination (BAP) Unit [22211012]en_US
dc.description.sponsorshipSelcuk University-Scientific Research Projects Coordination (BAP) Unit supported the project (22211012).en_US
dc.identifier.doi10.3390/mi14101860
dc.identifier.issn2072-666X
dc.identifier.issue10en_US
dc.identifier.pmid37893298en_US
dc.identifier.scopus2-s2.0-85175366184en_US
dc.identifier.urihttps://doi.org/10.3390/mi14101860
dc.identifier.urihttps://hdl.handle.net/20.500.12452/15945
dc.identifier.volume14en_US
dc.identifier.wosWOS:001099398600001en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.indekslendigikaynakPubMeden_US
dc.language.isoenen_US
dc.publisherMdpien_US
dc.relation.ispartofMicromachinesen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectMolybdenum Oxideen_US
dc.subjectAtomic Layer Depositionen_US
dc.subjectSputtering Depositionen_US
dc.subjectUrbach Tail Energyen_US
dc.subjectLow Roughness Optoelectronic Devicesen_US
dc.titlePositive and Negative Photoconductivity in Ir Nanofilm-Coated MoO3 Bias-Switching Photodetectoren_US
dc.typeArticleen_US

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