THE INFLUENCE OF HIGH-ENERGY ELECTRONS IRRADIATION ON SURFACE OF n-GaP AND ON Au/n-GaP/Al SCHOTTKY BARRIER DIODE

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dc.contributor.authorDemir, K. Cinar
dc.contributor.authorKurudirek, S. V.
dc.contributor.authorOz, S.
dc.contributor.authorBiber, M.
dc.contributor.authorAydogan, S.
dc.contributor.authorSahin, Y.
dc.contributor.authorCoskun, C.
dc.date.accessioned2024-02-23T14:26:25Z
dc.date.available2024-02-23T14:26:25Z
dc.date.issued2018
dc.departmentNEÜen_US
dc.description.abstractWe fabricated 25 Au/n-GaP/Al Schottky devices and investigated the influence of high electron irradiation, which has 12MeV on the devices, at room temperature. The X-ray diffraction patterns, scanning electron microscopic images and Raman spectra of a gallium phosphide (GaP) semiconductor before and after electron irradiation have been analyzed. Furthermore, some electrical measurements of the devices were carried out through the current-voltage (I-V) and capacitance-voltage (C-V) measurements. From the I-V characteristics, experimental ideality factor n and barrier height Phi values of these Schottky diodes have been determined before and after irradiation, respectively. The results have also been analyzed statically, and a gauss distribution has been obtained. The built-in potential V-bi, barrier height Phi, Fermi level E-F and donor concentration N-d values have been determined from the reverse bias C-V and C-2-V curves of Au/n-GaP/Al Schottky barrier diodes at 100 kHz before and after 12MeV electron irradiation. Furthermore, we obtained the series resistance values of Au/n-GaP/Al Schottky barrier diodes with the help of different methods. Experimental results confirmed that the electrical characterization of the device changed with the electron irradiation.en_US
dc.identifier.doi10.1142/S0218625X18500646
dc.identifier.issn0218-625X
dc.identifier.issn1793-6667
dc.identifier.issue3en_US
dc.identifier.scopus2-s2.0-85023184628en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.urihttps://doi.org/10.1142/S0218625X18500646
dc.identifier.urihttps://hdl.handle.net/20.500.12452/14172
dc.identifier.volume25en_US
dc.identifier.wosWOS:000427076800003en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherWorld Scientific Publ Co Pte Ltden_US
dc.relation.ispartofSurface Review And Lettersen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectIii-V Semiconductorsen_US
dc.subjectGapen_US
dc.subjectSchottky Diodeen_US
dc.subjectIrradiation Effecten_US
dc.subjectSurface Physicsen_US
dc.titleTHE INFLUENCE OF HIGH-ENERGY ELECTRONS IRRADIATION ON SURFACE OF n-GaP AND ON Au/n-GaP/Al SCHOTTKY BARRIER DIODEen_US
dc.typeArticleen_US

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