Self-Powered UV Photodetector Utilizing Plasmonic Hot Carriers in 2D ?-MoO3/Ir/Si Schottky Heterojunction Devices

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dc.contributor.authorBasyooni, Mohamed A.
dc.contributor.authorZaki, Shrouk E.
dc.contributor.authorTihtih, Mohammed
dc.contributor.authorBoukhoubza, Issam
dc.contributor.authorEn-nadir, Redouane
dc.contributor.authorDerkaoui, Issam
dc.contributor.authorAttia, Gamal F.
dc.date.accessioned2024-02-23T13:03:32Z
dc.date.available2024-02-23T13:03:32Z
dc.date.issued2024
dc.departmentNEÜen_US
dc.description.abstractSelf-powered UV sensing has enormous potential in military and civilian applications. However, achieving high responsivity and fast response/recovery time presents significant challenges. Self-powered photodetectors (PDs) have several advantages over traditional PDs, including higher sensitivity, lower power consumption, and simpler design. This study introduces a breakthrough self-powered PD that uses a Schottky junction of 2D alpha-MoO3/iridium (Ir)/Si ultrathin film to detect 365 nm light at 0 V bias through using atomic layer deposition (ALD) and sputtering systems. The PD response is enhanced by plasmonic Ir-induced hot carriers, enabling detection in a mere 0.1 ms. Incorporating a 4 nm Ir layer boosts the responsivity from 0 to 34 A W-1, and the external quantum efficiency is elevated from 0 to 7E11 under 365 nm light illumination. It also has a high I-ON/I-OFF ratio of 11.22E4 at 0 V. These results make the MoO3/4 nm Ir/Si structure an interesting option for self-powered PDs with high efficiency, and the use of a simple ALD system for large-scale fabrication of 2D alpha-MoO3 on hot carrier Ir plasmonic layer. The findings of this research hold tremendous promise in the field of UV sensing and can lead to exciting developments in military and civilian technology.en_US
dc.description.sponsorshipScientific Research Projects Coordination (BAP) Unit of Selcuk University [22211012]en_US
dc.description.sponsorshipThe authors express their gratitude to the Scientific Research Projects Coordination (BAP) Unit of Selcuk University for providing financial support for the project (grant no. 22211012). The authors also acknowledge the Science and Technology Research and Application Center (BITAM) of Necmettin Erbakan University for their ongoing assistance with the preparation and characterization section.en_US
dc.identifier.doi10.1002/pssr.202300175
dc.identifier.issn1862-6254
dc.identifier.issn1862-6270
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-85160740730en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1002/pssr.202300175
dc.identifier.urihttps://hdl.handle.net/20.500.12452/10661
dc.identifier.volume18en_US
dc.identifier.wosWOS:000998907200001en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherWiley-V C H Verlag Gmbhen_US
dc.relation.ispartofPhysica Status Solidi-Rapid Research Lettersen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAtomic Layer Deposition (Ald)en_US
dc.subjectIren_US
dc.subjectMoo3en_US
dc.subjectSelf-Powered Photodetectorsen_US
dc.subjectUltrathin Filmsen_US
dc.subjectUv Illuminationsen_US
dc.titleSelf-Powered UV Photodetector Utilizing Plasmonic Hot Carriers in 2D ?-MoO3/Ir/Si Schottky Heterojunction Devicesen_US
dc.typeArticleen_US

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