Effects of PEDOT:PSS and crystal violet interface layers on current-voltage performance of Schottky barrier diodes as a function of temperature and variation of diode capacitance with frequency

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dc.contributor.authorDeniz, A. R.
dc.contributor.authorTas, A. I.
dc.contributor.authorCaldiran, Z.
dc.contributor.authorIncekara, U.
dc.contributor.authorBiber, M.
dc.contributor.authorAydogan, S.
dc.contributor.authorTurut, A.
dc.date.accessioned2024-02-23T14:02:23Z
dc.date.available2024-02-23T14:02:23Z
dc.date.issued2022
dc.departmentNEÜen_US
dc.description.abstractIn this study, diode applications of Crystal Violet (CV) and PEDOT materials were studied. The Ni/p-Si/Al, Ni/CV/p-Si/Al and Ni/PEDOT:PSS/CV/p-Si/Al diodes were fabricated. The I-V (current-voltage) characteristics of all diodes were analyzed at room temperature, it was determined that the PEDOT:PSS and CV materials improved the basic diode parameters. Also, I-V characteristics of Ni/PEDOT:PSS/CV/p-Si/Al of diode were investigated for different temperature values. It has been determined that the basic diode parameters are strongly dependent on temperature. It was determined that while the barrier height (Fb) increased with increasing temperature, the ideality factor (n) and the series resistance (Rs) values decreased. Using temperature-dependent measurements, it was determined that the potential barrier and ideality factor values at the contact interface has a double Gaussian distribution. In addition, C-V (capacitance-voltage) measurements of these diodes were analyzed depending on the frequency. It was found that the diode capacitance decreased with increasing frequency.en_US
dc.identifier.doi10.1016/j.cap.2022.03.017
dc.identifier.endpage182en_US
dc.identifier.issn1567-1739
dc.identifier.issn1878-1675
dc.identifier.scopus2-s2.0-85130194193en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage173en_US
dc.identifier.urihttps://doi.org/10.1016/j.cap.2022.03.017
dc.identifier.urihttps://hdl.handle.net/20.500.12452/11682
dc.identifier.volume39en_US
dc.identifier.wosWOS:000899602900003en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofCurrent Applied Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subject[Keyword Not Available]en_US
dc.titleEffects of PEDOT:PSS and crystal violet interface layers on current-voltage performance of Schottky barrier diodes as a function of temperature and variation of diode capacitance with frequencyen_US
dc.typeArticleen_US

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