A comparison of the electrical characteristics of TiO2/p-Si/Ag, GNR-TiO2/p-Si/Ag and MWCNT-TiO2/p-Si/Ag photodiodes

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dc.contributor.authorErdal, Mehmet Okan
dc.contributor.authorYildirim, Murat
dc.contributor.authorKocyigit, Adem
dc.date.accessioned2024-02-23T13:56:13Z
dc.date.available2024-02-23T13:56:13Z
dc.date.issued2019
dc.departmentNEÜen_US
dc.description.abstractThe TiO2/p-Si/Ag, graphene nanoparticles doped (GNR) TiO2/p-Si/Ag and multi-walled carbon nanotube (MWCNT) doped TiO2/p-Si/Ag photodiodes were fabricated by electro-spinning technique at the same experimental conditions, and their structural, morphological and electrical properties were compared for photodiode applications. XRD measurements were confirmed undoped, GNR and MWCNT doped TiO2 structures, and brookite phase of (121) preferred orientation TiO2 has been observed from XRD patterns. SEM images of the heterojunctions showed that undoped and doped TiO2 layer have homogenous surfaces. I-V measurements were performed for electrical characterization of the TiO2/p-Si/Ag, GNR-TiO2/p-Si/Ag and MWCNT-TiO2/p-Si/Ag photodiodes under dark and light illumination conditions at room temperatures. The results imparted that all heterojunctions have good rectifying and photodiode properties. Some heterojunction parameters such as ideality factor, barrier height, series resistance were calculated and discussed in details according to thermionic emission theory, Cheung and Norde techniques. The determined ideality factor values are 8.55, 9.70 and 8.99, and barrier height values are 0.75 eV, 0.74 eV and 0.73 eV for the TiO2/p-Si/Ag, GNR-TiO2/p-Si/Ag and MWCNT-TiO2/p-Si/Ag photodiodes, respectively. These heterojunctions can be considered and improved as photodiodes in industrial applications.en_US
dc.identifier.doi10.1007/s10854-019-01731-0
dc.identifier.endpage13626en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue14en_US
dc.identifier.scopus2-s2.0-85068058390en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage13617en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-019-01731-0
dc.identifier.urihttps://hdl.handle.net/20.500.12452/11132
dc.identifier.volume30en_US
dc.identifier.wosWOS:000476518000079en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal Of Materials Science-Materials In Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subject[Keyword Not Available]en_US
dc.titleA comparison of the electrical characteristics of TiO2/p-Si/Ag, GNR-TiO2/p-Si/Ag and MWCNT-TiO2/p-Si/Ag photodiodesen_US
dc.typeArticleen_US

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