On thermal and optical sensor applications of chitosan molecule in the Co/Chitosan/p-Si hybrid heterojunction design

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dc.contributor.authorKacus, Hatice
dc.contributor.authorAydogan, Sakir
dc.contributor.authorIncekara, Umit
dc.contributor.authorYilmaz, Mehmet
dc.contributor.authorBiber, Mehmet
dc.date.accessioned2024-02-23T13:56:13Z
dc.date.available2024-02-23T13:56:13Z
dc.date.issued2021
dc.departmentNEÜen_US
dc.description.abstractCo/Chitosan/p-Si/Al and Co/p-Si devices were made and barrier height and ideality factor values of both devices were determined at room temperature (dark conditions). After the chitosan interlayer was found to improve the device, the thermal and photosensivity properties of the Co/Chitosan/p-Si/Al device were investigated in detail. The current-voltage measurements of Co/Chitosan/p-Si/Al heterojunction were performed in temperature range of 100-460 K and illumination intensity range of 100-400 mW/cm(2). It was seen that the device parameters such as barrier height, ideality factor, series resistance and interface states density were strongly dependent on temperature. Furthermore, the capacitance-voltage (C-V) characteristics of the device were investigated at various frequencies at room temperature. The responsivity (R), detectivity (D*) and rectification ratio (RR) values of the Co/Chitosan/p-Si/Al heterojunction were found to be as a function of illumination intensity. The experimental results show that the fabricated device with chitosan thin film interlayer can be used in various optoelectronic applications, especially applications in low temperature switching devices, energy generation, photodiode and photodetector.en_US
dc.identifier.doi10.1007/s10854-021-05374-y
dc.identifier.endpage6597en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue5en_US
dc.identifier.scopus2-s2.0-85100547709en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage6586en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-021-05374-y
dc.identifier.urihttps://hdl.handle.net/20.500.12452/11134
dc.identifier.volume32en_US
dc.identifier.wosWOS:000615178100013en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal Of Materials Science-Materials In Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subject[Keyword Not Available]en_US
dc.titleOn thermal and optical sensor applications of chitosan molecule in the Co/Chitosan/p-Si hybrid heterojunction designen_US
dc.typeArticleen_US

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