Efficient MoWO3/VO2/MoS2/Si UV Schottky photodetectors; MoS2 optimization and monoclinic VO2 surface modifications

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dc.contributor.authorBasyooni, Mohamed A.
dc.contributor.authorZaki, Shrouk E.
dc.contributor.authorShaban, Mohamed
dc.contributor.authorEker, Yasin Ramazan
dc.contributor.authorYilmaz, Mucahit
dc.date.accessioned2024-02-23T14:16:44Z
dc.date.available2024-02-23T14:16:44Z
dc.date.issued2020
dc.departmentNEÜen_US
dc.description.abstractThe distinctive properties of strongly correlated oxides provide a variety of possibilities for modulating the properties of 2D transition metal dichalcogenides semiconductors; which represent a new class of superior optical and optoelectronic interfacing semiconductors. We report a novel approach to scaling-up molybdenum disulfide (MoS2) by combining the techniques of chemical and physical vapor deposition (CVD and PVD) and interfacing with a thin layer of monoclinic VO2. MoWO3/VO2/MoS2 photodetectors were manufactured at different sputtering times by depositing molybdenum oxide layers using a PVD technique on p-type silicon substrates followed by a sulphurization process in the CVD chamber. The high quality and the excellent structural and absorption properties of MoWO3/VO2/MoS2/Si with MoS2 deposited for 60 s enables its use as an efficient UV photodetector. The electronically coupled monoclinic VO2 layer on MoS2/Si causes a redshift and intensive MoS2 Raman peaks. Interestingly, the incorporation of VO2 dramatically changes the ratio between A-exciton (ground state exciton) and trion photoluminescence intensities of VO2/(30 s)MoS2/Si from < 1 to > 1. By increasing the deposition time of MoS2 from 60 to 180 s, the relative intensity of the B-exciton/Aexciton increases, whereas the lowest ratio at deposition time of 60 s refers to the high quality and low defect densities of the VO2/(60 s)MoS2/Si structure. Both the VO2/(60 s)MoS2/Si trion and A-exciton peaks have higher intensities compared with (60 s) MoS2/Si structure. The MoWO3/VO2/(60 s) MoS2/Si photodetector displays the highest photocurrent gain of 1.6, 4.32 x 10(8) Jones detectivity, and similar to 1.0 x 10(10) quantum efficiency at 365 nm. Moreover, the surface roughness and grains mapping are studied and a low semiconducting-metallic phase transition is observed at similar to 40 degrees C.en_US
dc.description.sponsorshipScientific Research Projects Coordination (BAP)-Konya Necmettin Erbakan University (NEU) [191319007]en_US
dc.description.sponsorshipThe authors declare that they have received financial support from Scientific Research Projects Coordination (BAP)-Konya Necmettin Erbakan University (NEU), under Project Number: 191319007 that have appeared to influence the work reported in this paper. Moreover, the authors would like to thank the Science and Technology Research and Application Center (BITAM)-NEU for the continuous support through the characterizations section.en_US
dc.identifier.doi10.1038/s41598-020-72990-9
dc.identifier.issn2045-2322
dc.identifier.issue1en_US
dc.identifier.pmid32985575en_US
dc.identifier.scopus2-s2.0-85091623296en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1038/s41598-020-72990-9
dc.identifier.urihttps://hdl.handle.net/20.500.12452/12767
dc.identifier.volume10en_US
dc.identifier.wosWOS:000577349200002en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.indekslendigikaynakPubMeden_US
dc.language.isoenen_US
dc.publisherNature Portfolioen_US
dc.relation.ispartofScientific Reportsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subject[Keyword Not Available]en_US
dc.titleEfficient MoWO3/VO2/MoS2/Si UV Schottky photodetectors; MoS2 optimization and monoclinic VO2 surface modificationsen_US
dc.typeArticleen_US

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