Interpretation of the I-V, C-V and G/?-V characteristics of the Au/ZnS/n-GaAs/In structure depending on annealing temperature

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dc.contributor.authorBaltakesmez, A.
dc.contributor.authorGuzeldir, B.
dc.contributor.authorSaglam, M.
dc.contributor.authorBiber, M.
dc.date.accessioned2024-02-23T14:13:25Z
dc.date.available2024-02-23T14:13:25Z
dc.date.issued2021
dc.departmentNEÜen_US
dc.description.abstractThe Zinc Sulphide (ZnS) thin film, which is included in the Au/n-GaAs/In diode as the interface layer, was grown on the n-GaAs semiconductor substrate by the spray pyrolysis method. First, to reveal some structural, surface and optical properties of the ZnS thin film, XRD, SEM and absorption measurements were taken. It was determined that the ZnS thin film completely covering the surface of the n-GaAs semiconductor substrate has a hexagonal structure and a forbidden energy range of 3.83 eV. Later, the current-voltage (I?V), the capacitancevoltage (C?V) and the conductance-voltage (G/?-V) measurements of the Au/ZnS/n-GaAs/In structure were taken at room temperature, and various important parameters of the structure were calculated with different methods. In order to reveal the effects of annealing temperature on the I?V, C?V and G/?-V measurements of Au/ ZnS/n-GaAs/In structure, the device was annealed at 100, 200 and 300 ?C respectively for 5 min in nitrogen gas environment. The characteristic parameters were calculated again and the results were interpreted comparatively. At the same time, with the help of the C?V and G/?-V characteristics, the dependence on applied bias voltage and frequency of the parameters such as dielectric constant, dielectric loss, loss tangent, ac electrical conductivity and real and imaginary part of electric modulus of the diode have been revealed. After thermal annealing at 200 ?C, it has been determined that the ideality factor, turn-on voltage and leakage current values are at minimum level and the barrier height and rectification ratio values are at maximum level. In other words, it has been revealed that the optimum thermal annealing temperature for this device is 200 ?C.en_US
dc.description.sponsorshipAtaturk University Scientific Research Management Office [FDA-2019-8256]en_US
dc.description.sponsorshipThis research was supported by the Ataturk University Scientific Research Management Office, under project number: FDA-2019-8256. The authors would like to thank Ataturk University Scientific Research Management Office for their support.en_US
dc.identifier.doi10.1016/j.physb.2020.412801
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.scopus2-s2.0-85102267979en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2020.412801
dc.identifier.urihttps://hdl.handle.net/20.500.12452/12430
dc.identifier.volume611en_US
dc.identifier.wosWOS:000643642400007en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofPhysica B-Condensed Matteren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSchottky Diodeen_US
dc.subjectZnsen_US
dc.subjectElectrical Characteristicsen_US
dc.subjectDielectric Propertiesen_US
dc.subjectSpray Pyrolysisen_US
dc.titleInterpretation of the I-V, C-V and G/?-V characteristics of the Au/ZnS/n-GaAs/In structure depending on annealing temperatureen_US
dc.typeArticleen_US

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