Determination of photovoltaic parameters of CIGS hetero junction solar cells produced by PLD technique, using SCAPS simulation program

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dc.contributor.authorGezgin, Serap Yigit
dc.contributor.authorHouimi, Amina
dc.contributor.authorGundogdu, Yasemin
dc.contributor.authorMercimek, Bedrettin
dc.contributor.authorKilic, Hamdi Sukur
dc.date.accessioned2024-02-23T14:16:29Z
dc.date.available2024-02-23T14:16:29Z
dc.date.issued2021
dc.departmentNEÜen_US
dc.description.abstractIn this study, CIGS ultrathin films of 52 nm, 89 nm, 183 nm and 244 nm thicknesses were grown on a n-Si substrate using PLD technique, then Ag/CIGS/Si/Al hetero-junction solar cells were formed by producing front finger and back contact. While the thickness of CIGS ultrathin film is increased, their grain sizes are also increased, crystal structures are developed and more light is absorbed within the thin film. The straight characteristics of hetero-junctions have been improved while the thicknesses of CIGS ultrathin film is decreased according to J-V characteristics of the hetero-junctions in the darkness. In addition, depending on CIGS ultrathin film thickness, the photovoltaic behavior of CIGS/Si hetero junction solar cells has been studied and interpreted in detail in this article. It can be concluded that CIGS/Si hetero-junction solar cell device produced based on CIGS ultrathin film of 183 nm thickness shows the highest short circuit current density and power conversion efficiency values among other thicknesses, with respect to J-V curve under the illumination (AM 1.5 solar radiation in 80 mW/cm2). Using SCAPS 1-D program, we have been able to successfully simulate CIGS/Si hetero-junction of 183 nm thickness.en_US
dc.description.sponsorshipSelcuk University, Scientific Research Projects Coordination (BAP) Unit [20401018, 18401178]en_US
dc.description.sponsorshipAuthors kindly would like to thank, Selcuk University, High Technology Research and Application Center and Selcuk University, Laser Induced Proton Therapy Application and Research Center for supplying with Infrastructure and Selcuk University, Scientific Research Projects Coordination (BAP) Unit for grands via projects with references of 20401018 and 18401178.en_US
dc.identifier.doi10.1016/j.vacuum.2021.110451
dc.identifier.issn0042-207X
dc.identifier.issn1879-2715
dc.identifier.scopus2-s2.0-85110005463en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1016/j.vacuum.2021.110451
dc.identifier.urihttps://hdl.handle.net/20.500.12452/12668
dc.identifier.volume192en_US
dc.identifier.wosWOS:000696622300006en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.relation.ispartofVacuumen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCigsen_US
dc.subjectUltrathin Filmen_US
dc.subjectPlden_US
dc.subjectSolar Cellen_US
dc.subjectEfficiencyen_US
dc.subjectThicknessen_US
dc.subjectScaps Simulationen_US
dc.titleDetermination of photovoltaic parameters of CIGS hetero junction solar cells produced by PLD technique, using SCAPS simulation programen_US
dc.typeArticleen_US

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