Photodiode behaviors of the AgSbS2 nanocrystals in a Schottky structure

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dc.contributor.authorKocyigit, Adem
dc.contributor.authorErdal, Mehmet Okan
dc.contributor.authorOzel, Faruk
dc.contributor.authorYildirim, Murat
dc.date.accessioned2024-02-23T14:20:46Z
dc.date.available2024-02-23T14:20:46Z
dc.date.issued2021
dc.departmentNEÜen_US
dc.description.abstractCubic phase AgSbS2 nanocrystals (NCs) were synthesized by the hot-injection method, and they were inserted between the Al and p-Si to fabricate Al/AgSbS2/p-Si photodiode by the thermal evaporation method. AgSbS2 NCs were characterized by XRD, SEM and TEM instruments to confirm the crystal phase, surface morphology as well as crystalline size. The XRD pattern revealed that the cubic crystalline structure of the AgSbS2. The spherical shapes and well surface morphology were affirmed by SEM and TEM analysis. Al/AgSbS2/p-Si photodiode was characterized by I-V measurements depending on the light power intensity and by C-V measurement for various frequencies. I-V characteristics revealed that the Al/AgSbS2/p-Si exhibited good photodiode behavior and a high rectifying ratio. Various diode and detector parameters were extracted from I-V measurements, and they were discussed in detail. The C-V characteristics highlighted that the Al/AgSbS2/p-Si photodiode showed voltage and frequency dependent profile at the accumulation region. The fabricated Al/AgSbS2/p-Si photodiode can be thought for optoelectronic applications.en_US
dc.description.sponsorshipTUBITAK (The Scientific and Technological Research Council of Turkey) [217M212]; Selcuk University BAP office [17401159]en_US
dc.description.sponsorshipThis work is supported by TUBITAK (The Scientific and Technological Research Council of Turkey) under project number 217M212 and Selcuk University BAP office with the Research Project Number 17401159.en_US
dc.identifier.doi10.1088/1361-6528/ac0b64
dc.identifier.issn0957-4484
dc.identifier.issn1361-6528
dc.identifier.issue38en_US
dc.identifier.pmid34130261en_US
dc.identifier.scopus2-s2.0-85110175469en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1088/1361-6528/ac0b64
dc.identifier.urihttps://hdl.handle.net/20.500.12452/13305
dc.identifier.volume32en_US
dc.identifier.wosWOS:000669092500001en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.indekslendigikaynakPubMeden_US
dc.language.isoenen_US
dc.publisherIop Publishing Ltden_US
dc.relation.ispartofNanotechnologyen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAgsbs2en_US
dc.subjectTernary Chalcogenidesen_US
dc.subjectSchottky Structureen_US
dc.subjectPhotodiodeen_US
dc.titlePhotodiode behaviors of the AgSbS2 nanocrystals in a Schottky structureen_US
dc.typeArticleen_US

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