Simultaneously-doping of HfO2 thin films by Ni with sputtering technique and effect of post annealing on structural and electrical properties

Basit Öğe Kaydı
dc.contributor.authorAkkaya, Abdullah
dc.contributor.authorKahveci, Osman
dc.contributor.authorSahin, Bunyamin
dc.contributor.authorAyyildiz, Enise
dc.date.accessioned2024-02-23T14:13:25Z
dc.date.available2024-02-23T14:13:25Z
dc.date.issued2023
dc.departmentNEÜen_US
dc.description.abstractThis article reports a detailed structural and electrical characterization study of Ni:HfO2 dielectrics grown by rf and dc sputtering and variations in the rapid thermal annealing temperature. Annealing produced obvious changes in the morphological structure of films and XRD confirmed that the crystallite size increased from 1.3 nm to 14.4 nm with the annealing temperature. XPS showed that the amount of non-lattice oxygen decreased owing to the effects of annealing and resistivity. Dc resistivity measurements showed that the lowest sheet resistance of 1.182 x 106 & omega;/ was achieved by as-deposited films and increased to 70.960 & omega;/ with annealing. Structural differences in films due to the effect of annealing caused equivalent circuit models to vary and different resistance values in electrochemical impedance spectrometry. This study illustrates that HfO2 thin films, boosted by doping and rapid thermal annealing, provide a route toward advanced gate oxide stack structures in electronic devices beyond conventional high-dielectric-constant materials.en_US
dc.description.sponsorshipErciyes University; [FOA-2017-7502]en_US
dc.description.sponsorshipThe authors would like to thank the Scientific Research Projects Unit of Erciyes University for funding and supporting the project under the contract number FOA-2017-7502.r of Erciyes University for funding and supporting the project under the contract number FOA-2017-7502.en_US
dc.identifier.doi10.1016/j.physb.2023.415034
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.scopus2-s2.0-85163137266en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2023.415034
dc.identifier.urihttps://hdl.handle.net/20.500.12452/12432
dc.identifier.volume665en_US
dc.identifier.wosWOS:001055361200001en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofPhysica B-Condensed Matteren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectHafnium Oxideen_US
dc.subjectSputteringen_US
dc.subjectThin Filmen_US
dc.subjectHfo2-Ni Alloyen_US
dc.subjectDc Resistivityen_US
dc.subjectEisen_US
dc.titleSimultaneously-doping of HfO2 thin films by Ni with sputtering technique and effect of post annealing on structural and electrical propertiesen_US
dc.typeArticleen_US

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