Improving Ag Thick Film Contacts and Al Back Surface Field Quality of PERC Silicon Solar Cells by High Speed Rapid Thermal Processing

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dc.contributor.authorUnsur, V
dc.contributor.authorEbong, A.
dc.date.accessioned2024-02-23T14:23:51Z
dc.date.available2024-02-23T14:23:51Z
dc.date.issued2020
dc.departmentNEÜen_US
dc.description17th IEEE International Conference on Smart Communities: Improving Quality of Life Using ICT, IoT and AI (IEEE HONET) -- DEC 14-16, 2020 -- Natl Univ Sci & Technol, ELECTR NETWORKen_US
dc.description.abstractRapid thermal processing (RTP) is a key technology in the screen-printed silver (Ag) and Aluminum (Al) metallization to form excellent contacts to silicon (Si) solar cell. The unique firing profiles of RTPs solve different tasks during contact co-firing, especially the ramp up and ramp down rates are very critical in achieving the precise contacts independent of the source of metallic pastes. The ramp up/down rates are controlled by the belt speed of the furnace which also determines the dwell time of the contact at elevated temperatures, which ranges from 750-800 degrees C. Although high belt speeds and hence high ramp up/downs, for contact co-firing are beneficial, due to the difficulties involved in reaching the peak firing temperature at high belt speeds, the commercial infrared (IR) belt furnaces are operated at belt speeds of between 180-200 inches per minute (ipm). Therefore, this paper reports on the development of high belt speeds for screen printed passivated emitter rear contacts (PERC) Si solar cell with no additional equipment. By achieving desired peak temperatures at high belt speeds (up to 375 ipm), the open circuit voltage (V-OC) can be increased by similar to 5 mV along with 1-2 % increase in fill factor (FF) without adding any cost to production line.en_US
dc.description.sponsorshipIEEE,IEEE N Carolina Council,IEEE USA,UNC Charlotteen_US
dc.identifier.doi10.1109/HONET50430.2020.9322659
dc.identifier.endpage147en_US
dc.identifier.isbn978-0-7381-0527-7
dc.identifier.issn1949-4092
dc.identifier.scopus2-s2.0-85101465272en_US
dc.identifier.startpage143en_US
dc.identifier.urihttps://doi.org/10.1109/HONET50430.2020.9322659
dc.identifier.urihttps://hdl.handle.net/20.500.12452/13726
dc.identifier.wosWOS:000833518200025en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.relation.ispartof2020 Ieee 17th International Conference On Smart Communities: Improving Quality Of Life Using Ict, Iot And Ai (Ieeehonet 2020)en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectBack Surface Fielden_US
dc.subjectAl-Bsfen_US
dc.subjectPercen_US
dc.subjectSilicon Solar Cellsen_US
dc.subjectRapid Thermal Processingen_US
dc.titleImproving Ag Thick Film Contacts and Al Back Surface Field Quality of PERC Silicon Solar Cells by High Speed Rapid Thermal Processingen_US
dc.typeConference Objecten_US

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