The modification of the characteristics of ZnO nanofibers by TCNQ doping content

Basit Öğe Kaydı
dc.contributor.authorErdal, Mehmet Okan
dc.contributor.authorKoyuncu, Mustafa
dc.contributor.authorDogan, Kemal
dc.contributor.authorOzturk, Teoman
dc.contributor.authorKocyigit, Adem
dc.contributor.authorYildirim, Murat
dc.date.accessioned2024-02-23T13:56:13Z
dc.date.available2024-02-23T13:56:13Z
dc.date.issued2021
dc.departmentNEÜen_US
dc.description.abstractIn this study, the electrical properties of an Al/p-Si metal/semiconductor photodiodes with Tetracyanoquinodimethane-Polyvinyl chloride (TCNQ-PVC) and PVC-TCNQ:ZnO interfacial layers were investigated. Growing of the interfacial layers on p-Si were fulfilled using electrospinning method as a fiber form. Al metallic and ohmic contacts were deposited via physical vapor deposition method. Scanning electron microscopy (SEM) pictures of the devices were captured to examine the morphology of the structure. Within the scope of electrical characterization, I-V measurements of the Al/PVC-TCNQ/p-Si and Al/PVC-TCNQ:ZnO/p-Si devices were accomplished both in the dark and under illumination conditions. Various device parameters, such as ideality factor and barrier height values were determined from I-V characteristics. Although the ideality factor values were obtained as 8.47 and 6.85 for undoped and ZnO-doped Al/PVC-TCNQ/p-Si diodes, the barrier height values were calculated as 0.84 for both devices. When a comparison was made between ZnO doped and undoped Al/PVC-TCNQ/p-Si diodes, it was evaluated that the rectification and photoresponse properties of the heterojunction diode was improved with ZnO dopant.en_US
dc.description.sponsorshipNecmettin Erbakan University Coordinatorship of Scientific Research Projects [191235001]en_US
dc.description.sponsorshipThis study was supported by Necmettin Erbakan University Coordinatorship of Scientific Research Projects under Grant No. 191235001.en_US
dc.identifier.doi10.1007/s10854-021-06199-5
dc.identifier.endpage17229en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue13en_US
dc.identifier.scopus2-s2.0-85107735920en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage17220en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-021-06199-5
dc.identifier.urihttps://hdl.handle.net/20.500.12452/11135
dc.identifier.volume32en_US
dc.identifier.wosWOS:000659031700003en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal Of Materials Science-Materials In Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subject[Keyword Not Available]en_US
dc.titleThe modification of the characteristics of ZnO nanofibers by TCNQ doping contenten_US
dc.typeArticleen_US

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu