Interface application of NiPt alloy nanoparticles decorated rGO nanocomposite to eliminate of contact problem between metal and inorganic/organic semiconductor

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dc.contributor.authorBaltakesmez, Ali
dc.contributor.authorSevim, Melike
dc.contributor.authorGuzeldir, Betul
dc.contributor.authorAykac, Cengiz
dc.contributor.authorBiber, Mehmet
dc.date.accessioned2024-02-23T14:12:32Z
dc.date.available2024-02-23T14:12:32Z
dc.date.issued2021
dc.departmentNEÜen_US
dc.description.abstractIn this study, synthesis of monodisperse NiPt alloy NPs, preparation of rGO, decoration of the NPs onto the rGO and interface application of the NiPt/rGO nanocomposite material were presented. Morphological and structural analysis showed that Ni70Pt30 NPs having particle size of 2.2 +/- 0.4 nm were obtained and de-corated onto the rGO. The I-D/I-G intensity ratio of the rGO was determined to be 1.02. On the other hand, the Ni70Pt30/rGO nanocomposite was used as interface layer in junctions of the Al/lnP and P3HT:PCBM/Al. In the Al/lnP as inorganic metal-semiconductor junction, the interface layer caused an increase in rectification ratio of up to 10(3). Moreover, the ideality factor and barrier height enhanced from 1.47 and 0.49 eV to 1.24 and 0.67 eV at 300 K. It is attributed to eliminate of metal diffusion in lnP and passivation of pinning Fermi level. Additionally, the Ni70Pt30/rGO nanocomposite layer was used fabrication of the P3HT:PCBM solar cell to eliminate of S-shaped J-V curve. The reference solar cell having S-shaped J-V curve showed 6.081 mA/cm(2) short circuit current density, 0.572 V open circuit voltage, 31.4% fill-factor and then 1.092% power conversion efficiency. The presence of the interface layer has caused an increase in the fill-factor value of more than 30%, while the PCE value increased by 15%. The best cell has 1.244% power conversion efficiency with 5.554 mA/cm(2) short circuit current density, 0.544 V open circuit voltage, 41.2% fill-factor. (C) 2021 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.jallcom.2021.158802
dc.identifier.issn0925-8388
dc.identifier.issn1873-4669
dc.identifier.scopus2-s2.0-85100810502en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2021.158802
dc.identifier.urihttps://hdl.handle.net/20.500.12452/12100
dc.identifier.volume867en_US
dc.identifier.wosWOS:000630276200012en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofJournal Of Alloys And Compoundsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAlloy Nanoparticlesen_US
dc.subjectReduced Graphene Oxideen_US
dc.subjectMetal-Semiconductor Junctionen_US
dc.subjectSolar Cellen_US
dc.titleInterface application of NiPt alloy nanoparticles decorated rGO nanocomposite to eliminate of contact problem between metal and inorganic/organic semiconductoren_US
dc.typeArticleen_US

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