Impact of thickness on optoelectronic properties of ?-MoO3 film photodetectors: Integrating first-principles calculations with experimental analysis

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dc.contributor.authorBasyooni, Mohamed A.
dc.contributor.authorAchehboune, Mohamed
dc.contributor.authorBoukhoubza, Issam
dc.contributor.authorGaballah, A. E. H.
dc.contributor.authorTihtih, Mohammed
dc.contributor.authorBelaid, Walid
dc.contributor.authorEn-nadir, Redouane
dc.date.accessioned2024-02-23T14:13:25Z
dc.date.available2024-02-23T14:13:25Z
dc.date.issued2023
dc.departmentNEÜen_US
dc.description.abstractThis study focused on investigating the optoelectronic properties of molybdenum trioxide (alpha-MoO3) thin films using the atomic layer deposition (ALD) technique through different cycle numbers and theoretical investigation. Initial band gap calculations using standard DFT with GGA-PBE resulted in a value of 1.19 eV, which deviated significantly from experimental measurements. The GGA + U method with Hubbard U corrections was applied for the first time to improve the accuracy. This refinement led to a more precise band gap value of 3.09 eV, closely matching previously reported experimental data. The electronic parameters of the alpha-MoO3 photodetector, such as ideality factor (n), barrier height (phi 0), and series resistance (Rs), were analyzed using the thermionic emission theory and confirmed by Cheung and Nord's methods. The results demonstrated that the sample deposited with 100 pulses exhibited higher photodetector performance under UV illumination, despite having a lower Rs.en_US
dc.description.sponsorshipSeluk University-Scientific Research Projects Coordination (BAP) Unit [22,211,012]en_US
dc.description.sponsorshipSelcuk University-Scientific Research Projects Coordination (BAP) Unit for supporting the project with 22,211,012.en_US
dc.identifier.doi10.1016/j.physb.2023.415373
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.scopus2-s2.0-85173233325en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2023.415373
dc.identifier.urihttps://hdl.handle.net/20.500.12452/12433
dc.identifier.volume670en_US
dc.identifier.wosWOS:001099167200001en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofPhysica B-Condensed Matteren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectUltrathinmoo3 Filmsen_US
dc.subjectUv Optoelectronicsen_US
dc.subjectAtomic Layer Deposition (Ald)en_US
dc.subjectDensity Functional Theory (Dft)en_US
dc.subjectHubbard U Correctionsen_US
dc.titleImpact of thickness on optoelectronic properties of ?-MoO3 film photodetectors: Integrating first-principles calculations with experimental analysisen_US
dc.typeArticleen_US

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