High-Performance Negative Self-Powered ?-MoO3/Ir/?-MoO3 Photodetectors: Probing the Influence of Coulomb Deep Traps

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dc.contributor.authorBasyooni, Mohamed A.
dc.contributor.authorTihtih, Mohammed
dc.contributor.authorZaki, Shrouk E.
dc.contributor.authorEker, Yasin Ramazan
dc.date.accessioned2024-02-23T14:16:35Z
dc.date.available2024-02-23T14:16:35Z
dc.date.issued2023
dc.departmentNEÜen_US
dc.description.abstractNanostructures of ultrathin 2D MoO3 semiconductors have gained significant attention in the field of transparent optoelectronics and nanophotonics due to their exceptional responsiveness. In this study, we investigate self-powered alpha-MoO3/Ir/alpha-MoO3 photodetectors, focusing on the influence of induced hot electrons in ultrathin alpha-MoO3 when combined with an ultrathin Ir plasmonic layer. Our results reveal the presence of both positive and negative photoconductivity at a 0 V bias voltage. Notably, by integrating a 2 nm Ir layer between post-annealed alpha-MoO3 films, we achieve remarkable performance metrics, including a high I-ON/I-OFF ratio of 3.8 x 10(6), external quantum efficiency of 132, and detectivity of 3.4 x 10(11) Jones at 0 V bias. Furthermore, the response time is impressively short, with only 0.2 ms, supported by an exceptionally low MoO3 surface roughness of 0.1 nm. The observed negative photoresponse is attributed to O-2 desorption from the MoO3 surface, resulting in increased carrier density and reduced mobility in the Ir layer due to Coulomb trapping and oxygen vacancy deep levels. Consequently, this leads to a decreased carrier mobility and diminished current in the heterostructure. Our findings underscore the enormous potential of ultrathin MoO3 semiconductors for high-performance negative conductivity optoelectronics and photonic applications.en_US
dc.description.sponsorshipSelcuk University-Scientific Research Projects Coordination (BAP) Unit [22211012]en_US
dc.description.sponsorshipThe authors would like to express their gratitude to the Selcuk University-Scientific Research Projects Coordination (BAP) Unit for their support under grant number 22211012. Additionally, the authors acknowledge the continuous support provided by Necmettin Erbakan University-Science and Technology Research and Application Center (BITAM) during the characterization sections.en_US
dc.identifier.doi10.1021/acsaelm.3c01047
dc.identifier.endpage5713en_US
dc.identifier.issn2637-6113
dc.identifier.issue10en_US
dc.identifier.scopus2-s2.0-85176139079en_US
dc.identifier.startpage5696en_US
dc.identifier.urihttps://doi.org/10.1021/acsaelm.3c01047
dc.identifier.urihttps://hdl.handle.net/20.500.12452/12728
dc.identifier.volume5en_US
dc.identifier.wosWOS:001078965100001en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherAmer Chemical Socen_US
dc.relation.ispartofAcs Applied Electronic Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMoo3en_US
dc.subjectIridiumen_US
dc.subjectPlasmonics Photodetectorsen_US
dc.subjectNegative Photoconductivity (Npc)en_US
dc.subjectAtomic Layer Deposition(Ald)en_US
dc.titleHigh-Performance Negative Self-Powered ?-MoO3/Ir/?-MoO3 Photodetectors: Probing the Influence of Coulomb Deep Trapsen_US
dc.typeArticleen_US

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