Correlating Crystal Thickness, Surface Morphology, and Charge Transport in Pristine and Doped Rubrene Single Crystals

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dc.contributor.authorKirn, Jae Joon
dc.contributor.authorBachevillier, Stefan
dc.contributor.authorArellano, D. Leonardo Gonzalez
dc.contributor.authorCherniawski, Benjamin P.
dc.contributor.authorBurnett, Edmund K.
dc.contributor.authorStingelin, Natalie
dc.contributor.authorAyela, Cedric
dc.date.accessioned2024-02-23T14:16:36Z
dc.date.available2024-02-23T14:16:36Z
dc.date.issued2018
dc.departmentNEÜen_US
dc.description.abstractThe relationship between charge transport and surface morphology is investigated by utilizing rubrene single crystals of varying thicknesses. In the case of pristine crystals, the surface conductivities decrease exponentially as the crystal thickness increases until similar to 4 mu m, beyond which the surface conductivity saturates. Investigation of the surface morphology using optical and atomic force microscopy reveals that thicker crystals have a higher number of molecular steps, increasing the overall surface roughness compared with thin crystals. The density of molecular steps as a surface trap is further quantified with the subthreshold slope of rubrene air gap transistors. This thickness-dependent surface conductivity is rationalized by a shift from in-plane to out-of-plane transport governed by surface roughness. The surface transport is disrupted by roughening of the crystal surface and becomes limited by the slower vertical crystallographic axis on molecular step edges. Separately, we investigate surface-doping of rubrene crystals by using fluoroalkyltrichrolosilane and observe a different mechanism for charge transport which is independent of surface roughness. This work demonstrates that the correlation between crystal thickness, surface morphology, and charge transport must be taken into account when measuring organic single crystals. Considering the fact that these molecular steps are universally observed on organic/inorganic and single/polycrystals, we believe that our findings can be widely applied to improve charge transport understanding.en_US
dc.description.sponsorshipNational Science Foundation [DMR-1508627]; Office of Naval Research [ONR N000147-14-1-0053, N00014-16-1-2612]; LabEx AMADEus, IdEx Bordeaux, Investissements d'Avenir programme of the French government [ANR-10-LABX-42, ANR-10-IDEX-03-02]; IdEx Bordeaux [ANR-10-IDEX-03-02]; Direct For Mathematical & Physical Scien; Division Of Materials Research [1508627] Funding Source: National Science Foundationen_US
dc.description.sponsorshipThe authors thank C. Daniel Frisbie and Xinglong Ren for providing with air-gap transistors. The authors thank Sema Demirci Uzun for providing valuable discussions on this project. J.K., D.A., B.C., E.B., and A.B. acknowledge the National Science Foundation (DMR-1508627) and the Office of Naval Research (ONR N000147-14-1-0053 and N00014-16-1-2612). G.W. and A.B. are thankful to the LabEx AMADEus (ANR-10-LABX-42) in the framework of IdEx Bordeaux (ANR-10-IDEX-03-02), that is, the Investissements d'Avenir programme of the French government managed by the Agence Nationale de la Recherche. N.S. gratefully acknowledges the support of the IdEx Bordeaux (ANR-10-IDEX-03-02).en_US
dc.identifier.doi10.1021/acsami.8b04451
dc.identifier.endpage26751en_US
dc.identifier.issn1944-8244
dc.identifier.issue31en_US
dc.identifier.pmid29999309en_US
dc.identifier.scopus2-s2.0-85049963328en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage26745en_US
dc.identifier.urihttps://doi.org/10.1021/acsami.8b04451
dc.identifier.urihttps://hdl.handle.net/20.500.12452/12735
dc.identifier.volume10en_US
dc.identifier.wosWOS:000441477800102en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.indekslendigikaynakPubMeden_US
dc.language.isoenen_US
dc.publisherAmer Chemical Socen_US
dc.relation.ispartofAcs Applied Materials & Interfacesen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectRubrene Single Crystalen_US
dc.subjectMolecular Stepsen_US
dc.subjectSurface-Dopingen_US
dc.subjectSurface Charge Trapsen_US
dc.subjectAir-Gap Transistorsen_US
dc.titleCorrelating Crystal Thickness, Surface Morphology, and Charge Transport in Pristine and Doped Rubrene Single Crystalsen_US
dc.typeArticleen_US

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