The Effect of CZTS Ultrathin Film Thickness on the Electrical Characteristic of CZTS/Si Heterojunction Solar Cells in the Darkness and under the Illumination Conditions

Basit Öğe Kaydı
dc.contributor.authorGezgin, Serap Yigit
dc.contributor.authorHouimi, Amina
dc.contributor.authorMercimek, Bedrettin
dc.contributor.authorKilic, Hamdi Sukur
dc.date.accessioned2024-02-23T13:59:57Z
dc.date.available2024-02-23T13:59:57Z
dc.date.issued2021
dc.departmentNEÜen_US
dc.description.abstractIn this study, Ag/CZTS/Si/Al heterojunction solar cells were produced depending on some parameters of CZTS ultrathin active film layers grown on a n-Si wafer by PLD technique. CZTS ultrathin films have been produced as a function of the number of laser pulses and then annealed in a tube oven as a function of sulfurization temperature. The crystal structure, the optical and morphological properties of grown&annealed CZTS ultrathin films were examined by XRD, UV-vis spectra, AFM, respectively. The electrical characteristics of CZTS heterojunction solar cell in the darkness, which were investigated by the conventional J-V Method, Cheung Cheung Method and Norde Method. As the thickness of CZTS ultrathin films increased, the forward current of CZTS heterojunctions increased and their ideality factor, serial resistance and barrier height decreased. Also, the efficiency of Ag/CZTS/Si/Al heterojunction solar cells have been examined and characterised as a function of CZTS ultrathin film thickness under the illumination conditions. J-V curves of CZTS heterojunction solar cells were determined under AM 1.5 solar radiation in 80 MW/cm(2), all CZTS heterojunction solar cells have exhibited the photovoltaic behaviour. J(sc), V-oc, FF, eta parameters of Ag/CZTS/Si/Al heterojunction solar cells were measured, interpreted and compared with each other.en_US
dc.description.sponsorshipScientific and Technical Research Council of Turkey (TUBITAK) [1649B031503748]; Selcuk University, Scientific Research Projects Coordination (BAP) Unit [18401178, 18401124, 15201070]en_US
dc.description.sponsorshipAuthors kindly would like to thank,; Scientific and Technical Research Council of Turkey (TUBITAK) for financial support via Grant No. 1649B031503748,; Selcuk University, Scientific Research Projects Coordination (BAP) Unit for grands via projects with references of 18401178, 18401124 and 15201070.en_US
dc.identifier.doi10.1007/s12633-020-00847-x
dc.identifier.endpage3567en_US
dc.identifier.issn1876-990X
dc.identifier.issn1876-9918
dc.identifier.issue10en_US
dc.identifier.scopus2-s2.0-85096444339en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage3555en_US
dc.identifier.urihttps://doi.org/10.1007/s12633-020-00847-x
dc.identifier.urihttps://hdl.handle.net/20.500.12452/11390
dc.identifier.volume13en_US
dc.identifier.wosWOS:000592111600001en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofSiliconen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCztsen_US
dc.subjectPlden_US
dc.subjectHeterojunctionen_US
dc.subjectSolar Cellen_US
dc.subjectUltrathin Filmen_US
dc.subjectEfficiencyen_US
dc.subjectIdeality Factoren_US
dc.subjectSerial Resistivityen_US
dc.titleThe Effect of CZTS Ultrathin Film Thickness on the Electrical Characteristic of CZTS/Si Heterojunction Solar Cells in the Darkness and under the Illumination Conditionsen_US
dc.typeArticleen_US

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu