Tuning the Metal-Insulator Transition Properties of VO2 Thin Films with the Synergetic Combination of Oxygen Vacancies, Strain Engineering, and Tungsten Doping

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dc.contributor.authorBasyooni, Mohamed A.
dc.contributor.authorAl-Dossari, Mawaheb
dc.contributor.authorZaki, Shrouk E.
dc.contributor.authorEker, Yasin Ramazan
dc.contributor.authorYilmaz, Mucahit
dc.contributor.authorShaban, Mohamed
dc.date.accessioned2024-02-23T14:35:15Z
dc.date.available2024-02-23T14:35:15Z
dc.date.issued2022
dc.departmentNEÜen_US
dc.description.abstractVanadium oxide (VO2) is considered a Peierls-Mott insulator with a metal-insulator transition (MIT) at T-c = 68 degrees C. The tuning of MIT parameters is a crucial point to use VO2 within thermoelectric, electrochromic, or thermochromic applications. In this study, the effect of oxygen deficiencies, strain engineering, and metal tungsten doping are combined to tune the MIT with a low phase transition of 20 degrees C in the air without capsulation. Narrow hysteresis phase transition devices based on multilayer VO2, WO3, Mo0.2W0.8O3, and/or MoO3 oxide thin films deposited through a high vacuum sputtering are investigated. The deposited films are structurally, chemically, electrically, and optically characterized. Different conductivity behaviour was observed, with the highest value towards VO1.75/WO2.94 and the lowest VO1.75 on FTO glass. VO1.75/WO2.94 showed a narrow hysteresis curve with a single-phase transition. Thanks to the role of oxygen vacancies, the MIT temperature decreased to 35 degrees C, while the lowest value (T-c = 20 degrees C) was reached with Mo0.2W0.8O3/VO2/MoO3 structure. In this former sample, Mo0.2W0.8O3 was used for the first time as an anti-reflective and anti-oxidative layer. The results showed that the MoO3 bottom layer is more suitable than WO3 to enhance the electrical properties of VO2 thin films. This work is applied to fast phase transition devices.en_US
dc.description.sponsorshipKing Khalid University under the Research Center for Advance Materials (RCAMS) at King Khalid University, Saudi Arabia [KKU/RCAMS/22]en_US
dc.description.sponsorshipThe APC was funded by the King Khalid University through a grant KKU/RCAMS/22 under the Research Center for Advance Materials (RCAMS) at King Khalid University, Saudi Arabia.en_US
dc.identifier.doi10.3390/nano12091470
dc.identifier.issn2079-4991
dc.identifier.issue9en_US
dc.identifier.pmid35564181en_US
dc.identifier.scopus2-s2.0-85128747164en_US
dc.identifier.urihttps://doi.org/10.3390/nano12091470
dc.identifier.urihttps://hdl.handle.net/20.500.12452/15947
dc.identifier.volume12en_US
dc.identifier.wosWOS:000799328400001en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.indekslendigikaynakPubMeden_US
dc.language.isoenen_US
dc.publisherMdpien_US
dc.relation.ispartofNanomaterialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectThin Filmsen_US
dc.subjectVanadium Oxideen_US
dc.subjectThermochromicen_US
dc.subjectPhase Transition Deviceen_US
dc.subjectMetal-Insulator Transitionen_US
dc.titleTuning the Metal-Insulator Transition Properties of VO2 Thin Films with the Synergetic Combination of Oxygen Vacancies, Strain Engineering, and Tungsten Dopingen_US
dc.typeArticleen_US

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