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    Effect of in-/ex-situ annealing temperature on the optical, structural and gas sensing dynamics of CdS nanostructured thin films
    (Academic Press Ltd- Elsevier Science Ltd, 2020) Gormez, Arife Efe; Basyooni, Mohamed A.; Zaki, Shrouk E.; Eker, Yasin Ramazan; Sonmez, Erdal; Yilmaz, Mucahit
    Effect of in-/ex-situ annealing on the structure, optical, photoluminescence, electrical characterization and gas sensing dynamics on CdS thin films are presented. Raman characterizations showed an increase in the peak intensity with increasing the annealing temperature under ex-situ, while a lower peak intensity observed through the in-situ annealing condition. No shift was observed in the Photoluminescence peaks through the yellow band peaks of in-situ annealed samples, however, a slightly blue shift was observed through the ex-situ annealed samples. High conductivity was observed for all samples, while in the case of in-situ RT, in-situ 100 degrees C, ex-situ 200 degrees C and ex-situ 300 degrees C, a CO2 and O-2 gas sensing activity have been tested. The ex-situ 300 degrees C sample shows a higher response towards CO2 compared with the ex-situ 200 degrees C film. While, both in-situ RT and 100 degrees C sensors show the same response towards CO2 with a high gas response. However, the in-situ 100 degrees C sensor has the highest response compared to in-situ RT film with a high response of 25% at 50 sccm towards O-2.
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    The variation of the features of SnO2 and SnO2:F thin films as a function of V dopant
    (Springer, 2014) Turgut, Guven; Sonmez, Erdal; Yilmaz, Mehmet; Cogenli, M. Selim; Yilmaz, Mucahit; Turgut, Umit; Dilber, Refik
    V doped SnO2 and SnO2:F thin films were successfully deposited on glass substrates at 500 A degrees C with spray pyrolysis. It was observed that all films had SnO2 tetragonal rutile structure and the preferential orientation depended on spray solution chemistry (doping element and solvent type) by X-ray diffraction measurements. The lowest sheet resistance and the highest optical band gap, figure of merit, infrared (IR) reflectivity values of V doped SnO2 for ethanol and propane-2-ol solvents and V doped SnO2:F films were found to be 88.62 abroken vertical bar aEuro3.947 eV-1.02 x 10(-4) abroken vertical bar(-1)-65.49 %, 65.35 abroken vertical bar aEuro3.955 eV-8.54 x 10(-4) abroken vertical bar(-1)-72.58 %, 5.15 abroken vertical bar aEuro4.076 eV-6.15 x 10(-2) abroken vertical bar(-1)-97.32 %, respectively, with the electrical and optical measurements. Morphological properties of the films were investigated by atomic force microscope and scanning electron microscope measurements. From these analysis, the films consisted of nanoparticles and the film morphology depended on doping ratio/type and solvent type. It was observed pyramidal, polyhedron, needle-shaped and spherical grains on the films' surfaces. The films obtained in present study with these properties can be used as front contact for solar cells and it can be also one of appealing materials for other optoelectronic and IR coating applications.