Doğrusal katılaştırılmış Al-%13ağ.Mg2Si alaşımının mikroyapı karakterizasyonu

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dc.authorid0000-0002-2143-5965
dc.contributor.authorKaygısız, Yusuf
dc.date.accessioned2020-01-18T21:06:14Z
dc.date.available2020-01-18T21:06:14Z
dc.date.issued2017
dc.departmentNEÜ, Ereğli Mühendislik ve Doğa Bilimleri Fakültesi, Enerji Sistemleri Mühendisliği Bölümüen_US
dc.description.abstractIn the present work, effect of growth rates on microstructure for directionally solidified Al-13wt. %Mg2Si pseudoeutectic alloy at a constant temperature gradient were studied. The composition of pseuodoeutectic Al-Mg2Si alloy in Al-Mg-Si system was chosen to be Al13wt.%Mg2Si (Al–8.75wt.%Mg–4.25wt.%Si) to growth the eutectic phases from ternary liquid.Directional solidification process were carried out with different growth rates (V8.33–175.0 µm/s) at a constant temperature gradient (G6.63 K/mm) by using synchronous motors running at different speed by Bridgman-type furnace.According to phase diagrams and EDX results light grey, black and dark grey phases were identified as quenched liquid phase, Mg2Si coral-like and –Al matrix, respectively.As the growth rate is increased, the eutectic spacings decrease. When the growth rate of samples increases from 8.33 to 175 m/s the average eutectic spacing for Mg Si 2 decrease from 7.12 to 1.70µm. The highest eutectic spacing was obtained at the minimum growth rate and a constant temperature gradient (V8.33 µm/s, G6.68 K/mm). On the other hand, the smallest eutectic spacing was measured at the maximum value of growth rate and a constant temperature gradient (V175.0 m/s, G6.68 K/mm). The dependency of lamellar spacing () on growth rates (V) were obtained as 0.45 16.95 2 Mg Si V for AlMg2Sipseudoeutectic alloy.The bulk growth rate was also determined as V 2 Mg Si 2 408.96 µm3 /s by using the measured values of Mg Si 2 and V.en_US
dc.identifier.citationKaygısız, Y. (2017). Doğrusal katılaştırılmış Al-%13ağ.Mg2Si alaşımının mikroyapı karakterizasyonu. Dicle Üniversitesi Mühendislik Fakültesi Mühendislik Dergisi, 8, 4, 723-732.en_US
dc.identifier.endpage732en_US
dc.identifier.issn1309-8640en_US
dc.identifier.issn2146-4391en_US
dc.identifier.issue4en_US
dc.identifier.startpage723en_US
dc.identifier.urihttps://app.trdizin.gov.tr/makale/TWpnMU5UVTRPQT09/dogrusal-katilastirilmis-al-13ag-mg2si-alasiminin-mikroyapi-karakterizasyonu
dc.identifier.urihttps://hdl.handle.net/20.500.12452/2113
dc.identifier.volume8en_US
dc.indekslendigikaynakTR-Dizinen_US
dc.language.isotren_US
dc.relation.ispartofDicle Üniversitesi Mühendislik Fakültesi Mühendislik Dergisien_US
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Kurum Öğretim Elemanıen_US]
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectDoğrusal katılaştırma
dc.subjectAlüminyum alaşımlar
dc.subjectMikroyapı
dc.subjectÖtektik mesafeler
dc.subjectLinear solidification
dc.subjectAluminum alloys
dc.subjectMicrostructure
dc.subjectEutectic distances
dc.titleDoğrusal katılaştırılmış Al-%13ağ.Mg2Si alaşımının mikroyapı karakterizasyonuen_US
dc.title.alternativeMicrostructural characterization of directionally solidified Al13wt.%Mg2Si alloyen_US
dc.typeArticleen_US

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