Negative Photoconductivity in 2D ?-MoO3/Ir Self-Powered Photodetector: Impact of Post-Annealing
Küçük Resim Yok
Tarih
2023
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Mdpi
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
Surface plasmon technology is regarded as having significant potential for the enhancement of the performance of 2D oxide semiconductors, especially in terms of improving the light absorption of 2D MoO3 photodetectors. An ultrathin MoO3/Ir/SiO2/Si heterojunction Schottky self-powered photodetector is introduced here to showcase positive photoconductivity. In wafer-scale production, the initial un-annealed Mo/2 nm Ir/SiO2/Si sample displays a sheet carrier concentration of 5.76 x 10(11)/cm(2), which subsequently increases to 6.74 x 10(12)/cm(2) after annealing treatment, showing a negative photoconductivity behavior at a 0 V bias voltage. This suggests that annealing enhances the diffusion of Ir into the MoO3 layer, resulting in an increased phonon scattering probability and, consequently, an extension of the negative photoconductivity behavior. This underscores the significance of negative photoconductive devices in the realm of optoelectronic applications.
Açıklama
Anahtar Kelimeler
Negative Photoconductivity, Thin Film, Photodetector, Plasmonic, 2d Oxide Semiconductors
Kaynak
Materials
WoS Q Değeri
Scopus Q Değeri
Cilt
16
Sayı
20
