Negative Photoconductivity in 2D ?-MoO3/Ir Self-Powered Photodetector: Impact of Post-Annealing

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dc.contributor.authorBasyooni-M. Kabatas, Mohamed A.
dc.contributor.authorZaki, Shrouk E.
dc.contributor.authorRahmani, Khalid
dc.contributor.authorEn-nadir, Redouane
dc.contributor.authorEker, Yasin Ramazan
dc.date.accessioned2024-02-23T14:35:12Z
dc.date.available2024-02-23T14:35:12Z
dc.date.issued2023
dc.departmentNEÜen_US
dc.description.abstractSurface plasmon technology is regarded as having significant potential for the enhancement of the performance of 2D oxide semiconductors, especially in terms of improving the light absorption of 2D MoO3 photodetectors. An ultrathin MoO3/Ir/SiO2/Si heterojunction Schottky self-powered photodetector is introduced here to showcase positive photoconductivity. In wafer-scale production, the initial un-annealed Mo/2 nm Ir/SiO2/Si sample displays a sheet carrier concentration of 5.76 x 10(11)/cm(2), which subsequently increases to 6.74 x 10(12)/cm(2) after annealing treatment, showing a negative photoconductivity behavior at a 0 V bias voltage. This suggests that annealing enhances the diffusion of Ir into the MoO3 layer, resulting in an increased phonon scattering probability and, consequently, an extension of the negative photoconductivity behavior. This underscores the significance of negative photoconductive devices in the realm of optoelectronic applications.en_US
dc.description.sponsorshipSelcuk University-Scientific Research Projects Coordination(BAP) Unit [22211012]en_US
dc.description.sponsorshipThis research was funded by Selcuk University-Scientific Research Projects Coordination(BAP) Unit under grant number 22211012.en_US
dc.identifier.doi10.3390/ma16206756
dc.identifier.issn1996-1944
dc.identifier.issue20en_US
dc.identifier.pmid37895738en_US
dc.identifier.scopus2-s2.0-85175315173en_US
dc.identifier.urihttps://doi.org/10.3390/ma16206756
dc.identifier.urihttps://hdl.handle.net/20.500.12452/15930
dc.identifier.volume16en_US
dc.identifier.wosWOS:001099416300001en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.indekslendigikaynakPubMeden_US
dc.language.isoenen_US
dc.publisherMdpien_US
dc.relation.ispartofMaterialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectNegative Photoconductivityen_US
dc.subjectThin Filmen_US
dc.subjectPhotodetectoren_US
dc.subjectPlasmonicen_US
dc.subject2d Oxide Semiconductorsen_US
dc.titleNegative Photoconductivity in 2D ?-MoO3/Ir Self-Powered Photodetector: Impact of Post-Annealingen_US
dc.typeArticleen_US

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