Rapid thermal processing of cost-effective contacts for silicon solar cells

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dc.contributor.authorUnsur, Veysel
dc.contributor.authorKlein, Talysa
dc.contributor.authorvan Hest, Maikel F. A. M.
dc.contributor.authorAl Jassim, Mowafak
dc.contributor.authorEbong, Aba
dc.date.accessioned2024-02-23T13:03:30Z
dc.date.available2024-02-23T13:03:30Z
dc.date.issued2019
dc.departmentNEÜen_US
dc.description.abstractThis paper reports on the investigation of rapid thermal processing (RTP) of contacting the Al-BSF solar cell with Ag, Cu, and Ni in conjunction with aerosol printing technique. The study showed a liftoff and delamination, respectively, for the bi and tri stack layers of Ag frit/Ni and Ag frit/Ni/Cu fired above 790 degrees C peak firing temperature. The 770 degrees C peak firing temperature gave excellent electrical performance for both bi and tri stack layer contacts, which is not favorable to forming thick back surface field (BSF) required for high open circuit voltage (V-OC). This suggests that the bilayer and trilayer contacts involving Ag frit are limited to low peak firing temperature, but Ni frit, on the other hand, showed a wider firing temperature range. This is supported by low reverse saturation current density (J(02)) of 1.1 x 10(-11) A/cm(2) and high shunt resistance (R-SH) of 5750 omega center dot cm(2) for the Ni frit fired at 800 degrees C peak firing temperature. More so, the adhesion of Ni Frit to silicon is better than Ag counterpart as evidenced in the SEM micrograph. Thus, by adopting RTP Ni/Cu contacts, the cost of metallization of solar cell can be dropped from 35% of total processing cost to only 5% to 6%, which is approximately 30% drop in the total cost of processing.en_US
dc.description.sponsorshipUS Department of Energy (Office of Science, Office of Basic Energy Sciences and Energy Efficiency and Renewable Energy, Solar Energy Technology Program) [DE-AC36-08GO28308]en_US
dc.description.sponsorshipUS Department of Energy (Office of Science, Office of Basic Energy Sciences and Energy Efficiency and Renewable Energy, Solar Energy Technology Program), Grant/Award Number: DE-AC36-08GO28308en_US
dc.identifier.doi10.1002/pip.3119
dc.identifier.endpage459en_US
dc.identifier.issn1062-7995
dc.identifier.issn1099-159X
dc.identifier.issue5en_US
dc.identifier.scopus2-s2.0-85061602867en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage453en_US
dc.identifier.urihttps://doi.org/10.1002/pip.3119
dc.identifier.urihttps://hdl.handle.net/20.500.12452/10642
dc.identifier.volume27en_US
dc.identifier.wosWOS:000463108700006en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherWileyen_US
dc.relation.ispartofProgress In Photovoltaicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectAerosol Printingen_US
dc.subjectCopper Contactsen_US
dc.subjectMetallizationen_US
dc.subjectNickel Contactsen_US
dc.subjectPassivated Emitter Rear Contact (Perc) Cellsen_US
dc.subjectPlatingen_US
dc.subjectSi Solar Cellsen_US
dc.titleRapid thermal processing of cost-effective contacts for silicon solar cellsen_US
dc.typeArticleen_US

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