Directional solidification of Al-Cu-Si-Mg quaternary eutectic alloy
Küçük Resim Yok
Tarih
2017
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Sa
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The effects of growth rates on the microstructure, microhardness, tensile strength, and electrical resistivity were studied in directionally solidified Al-Cu -Si -Mg (A1-28 wt%Cu-6wt.%Si-2.2 wt%Mg) quaternary eutectic alloy. The directional solidification process was carried out at five different growth rates (V = 9.63-173.5 mu m/s) at a constant temperature gradient (G = 6.88 Kimm). The microstructure of the directionally solidified Al-Cu-Si-Mg quaternary eutectic alloy consists of Al solid solution, irregular Si plates, and intermetallic Al2Cu (theta) and Cu2Mg8Si6Al5 (Q) phases with honeycomb morphology. The dependencies of lamellar spacing, microhardness, tensile strength, and electrical resistivity on growth rates were found to be lambda(CuAl2) = 19.05 V-041, lambda(Cu2Mg8Si6Al5) = 51.28 V-0.43, lambda(si) = 8.74 V-0.46, HV = 170.7 + 79.08V(0.25), HV = 237.68(V)(0.043) sigma = 343.45(V)(0.15), and rho = 3.42 x 10(-8)(V)(0.10) orespectively, for the Al-Cu-Si-Mg quaternary eutectic alloy. The bulk growth rates were also determined lambda(2)(si) V = 92.24, lambda(2)(CuAl2) = 669.2, and lambda(Cu2Mg8Si6Al5) V = 4205.5 mu(3)/s by using the measured values of lambda Mg2Si, lambda(CuAl2), lambda(Cu2Mg8Si6Al5), and V for the Si plates and intermetallic Al2Cu (theta) and Cu2Mg8Si6Al5 (Q) phases in the Al-Cu-Si-Mg eutectic alloy, respectively. (C) 2017 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Directional Solidification, Quaternary Eutectic Alloy, Aluminium Alloy, Microstructure, Electrical Properties
Kaynak
Journal Of Alloys And Compounds
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
721
