Synthesıs Of Graphene Vıa Chemıcal Vapour Deposıtıon On Copper Substrates Wıth Dıfferent Thıcknesses

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dc.authorid0000-0002-3387-5095en_US
dc.contributor.authorYılmaz, Mücahit
dc.contributor.authorEker, Yasin Ramazan
dc.date.accessioned2020-01-18T21:03:02Z
dc.date.available2020-01-18T21:03:02Z
dc.date.issued2017
dc.departmentNEÜ, Seydişehir Ahmet Cengiz Mühendislik Fakültesi, Metalurji ve Malzeme Mühendisliği Bölümüen_US
dc.description.abstractThe quality of the graphene grown on the top and subside of copper substrate with different thicknesses was investigated. Graphenes were grown on the 9, 25, 150 and 250 ?m thickness copper substrates with Low-Pressure CVD by using CH4 process gas. Copper substrates were examined through XRD/XRF analysis. Graphenes that are grown on the surface of the copper substrate were characterized by Raman spectrometer. The results show that the grain size calculated from XRD data is decreasing as the thickness increases except for 25 ?m thick copper. Besides the micro-strain in the structure is increasing according to the thickness of substrate. Raman spectroscopy results show that the graphene grown on the top surface of the 9 ?m thick substrate is purely single-layer. The other samples consist of not only single-layer graphene but also few-layer graphene domains. When we look at I2D/IG ratios for samples on the top surface of coppers, the graphene doping decreases together with increasing thickness of substrate. At the same time, graphenes on the copper subsurface have blueshift and higher FWMH values. It reveals there is a close relation between the graphene and the copper subsurface. The graphene grown on the top side of the 150 ?m copper has the typical attribute of suspended single-layer graphene with the redshift of a narrow 2D peak and I2D/IG 4. In this study, the best sample is obtained on the top surface of the 150 ?m thick copper substrate. The large single-layer graphene is depend on microstrain rather than grain orientationen_US
dc.identifier.citationYılmaz, M., Eker, Y R. (2017). Synthesıs Of Graphene Vıa Chemıcal Vapour Deposıtıon On Copper Substrates Wıth Dıfferent Thıcknesses. Anadolu Üniversitesi Bilim ve Teknoloji Dergisi :A-Uygulamalı Bilimler ve Mühendislik. 18, 2, 289-300.en_US
dc.identifier.endpage300en_US
dc.identifier.issn1302-3160en_US
dc.identifier.issn2146-0205en_US
dc.identifier.issue2en_US
dc.identifier.startpage289en_US
dc.identifier.urihttp://app.trdizin.gov.tr/publication/paper/detail/TWpRMU56UTJOZz09
dc.identifier.urihttps://hdl.handle.net/20.500.12452/1425
dc.identifier.volume18en_US
dc.indekslendigikaynakTR-Dizinen_US
dc.language.isoenen_US
dc.relation.ispartofAnadolu Üniversitesi Bilim ve Teknoloji Dergisi :A-Uygulamalı Bilimler ve Mühendisliken_US
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Kurum Öğretim Elemanıen_US]
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectSingle-Layer Grapheneen_US
dc.subjectCVD Graphene Growthen_US
dc.subjectCopper Substrateen_US
dc.titleSynthesıs Of Graphene Vıa Chemıcal Vapour Deposıtıon On Copper Substrates Wıth Dıfferent Thıcknessesen_US
dc.typeArticleen_US

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