Molybdenum disulfide thin films fabrication from multi-phase molybdenum oxide using magnetron sputtering and CVD systems together
Küçük Resim Yok
Tarih
2020
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Academic Press Ltd- Elsevier Science Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Molybdenum disulfide (MoS2) is a layered 2D semiconducting material with a tunable bandgap and a promising materials for next generation optoelectronics applications. In this study, the characterization of large-scale MoS2 films obtained by sulfurization of Mo-O films grown in different thicknesses with reactive magnetron sputtering method at 400 degrees C are reported. At a critical deposition temperature of 400 degrees C, different phases of Mo-O structure with high photoluminescent and bandgap were observed. Although there are no triangular domains, bandgaps and PL properties are close to few-layered MoS2. The enhanced PL intensities attributed to the increasing amount of MoO2 that may cause MoS2's folding and the large number of electrons from MoO2 in the MoO2-MoS2 hetero-structure. The UV-VIS spectroscopy analysis shows that two bandgaps are presented with a low and high values which may extend a wide absorption range. One of these bandgaps is compatible with few-layer MoS2s and the other increases by the thickness of the Mo-O film grown by magnetron sputtering. This explains the absorption at low wavelengths, but also shows that the MoO2 structure can be used to adjust the band gaps of MoSs. The combined growth technique of magnetron sputtering and CVD is provided a high quality and homogeneous MoS2 thin films for next-generation optoelectronics and nanoelectronic devices, as well as for other potential applications.
Açıklama
Anahtar Kelimeler
Molybdenum Disulfide, Thin Films, Two-Dimensional Materials, Transition-Metal Dichalcogenides
Kaynak
Superlattices And Microstructures
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
143
